Hostname: page-component-586b7cd67f-t8hqh Total loading time: 0 Render date: 2024-11-28T17:48:41.970Z Has data issue: false hasContentIssue false

Copper-sulfide Passivation Capping for Cu Interconnects

Published online by Cambridge University Press:  01 February 2011

Get access

Abstract

Copper-sulfide is proposed as a selective self-aligned passivation capping film on Cu lines, to improve the lines immunity against electromigration. Copper-sulfide is tenacious, having excellent adhesion (chemically bonded) to the underlying copper lines and strong adhesion to the overlying dielectric capping barrier. Contrary to other passivation schemes, Cu sulfidation is 100% selective. The sulfidation can be done by a wet or a dry process. A very thin copper-sulfide film (of about 25-100Å) will be required, and no significant increase of RC delay is expected.

Type
Research Article
Copyright
Copyright © Materials Research Society 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Cohen, U., U.S. Pat. No. 7,573,133; and U.S. Pat. No. 7,709,958.Google Scholar
[2] Cohen, U., Provisional Pat. Applications 60/528,561 (filed on 02/09/2003); 60/581,285 (filed on 06/18/2004); and 60/686,133 (filed on 05/31/2005).Google Scholar
[3] Shacham-Diamand, Y., Sverdlov, Y., and Petrov, N., J. Electrochem. Soc., Vol. 148, pp. C162–C167 (2001).Google Scholar
[4] Mathew, V. et al. , “Electroless Plated CoWB and CoWPB Films for Copper Cap Applications”, ECS Meeting, May 2005.Google Scholar
[5] Singer, Peter, “Copper Challenges for the 45 nm Node”, Semiconductor International, 5/1/2005.Google Scholar
[6] Lee, Bill, “Electroless CoWP Boosts Copper Reliability, Device Performance”, Semiconductor International, 7/1/2004.Google Scholar
[7] Singer, Peter, “The Advantages of Capping Copper With Cobalt”, Semiconductor International, 10/1/2005.Google Scholar
[8] Narasimhan, Murali, “Taking Control of the Copper Process at 65 nm”, Future Fab Intl., Vol. 16, 2/3/2004.Google Scholar
[9] Alers, G. B., “45nm Reliability Issues”, Novellus System's website link: http://www.novellus.com/NR/rdonlyres/E2C79565-D703-4C08-9A02-D744FAA94A02/0/050605_45nm_reliability_issues.pdfGoogle Scholar
[10] Gosset, L. G. et al. , Proceeding of 2003 AMC Conference, pp. 321327 (2004).Google Scholar
[11] Dumont-Girard, P. et al. , 2005 International Interconnect Technology Conference (IITC), pp. 132134, June 2005.Google Scholar