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Conversion of Basal Plane Dislocations to Threading Edge Dislocations by High Temperature Annealing of 4H-SiC Epilayers

Published online by Cambridge University Press:  25 May 2012

Xuan Zhang  and
Hidekazu Tsuchida
Xuan Zhang
Affiliation:
Central Research Institute of Electric Power Industry, 2-6-1 Nagasaka, Yokosuka, Kanagawa 240-0196, Japan
Hidekazu Tsuchida
Affiliation:
Central Research Institute of Electric Power Industry, 2-6-1 Nagasaka, Yokosuka, Kanagawa 240-0196, Japan
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Abstract

Conversion of basal plane dislocations (BPDs) to threading edge dislocations (TEDs) has been observed in 4H-SiC epilayers by simple high temperature annealing. Grazing incidence reflection synchrotron X-ray topography was used to image the dislocations in the epilayers. By comparing the X-ray topographs before and after annealing, some of the BPDs were confirmed to convert to TEDs from the epilayer surface. The dislocation behaviors during annealing are explained and the mechanism of BPD conversion is discussed. It is argued that the conversion process is realized by constricted BPD segments cross-slipping to the prismatic plane driven by the image force and TED glide on its slip plane driven by the line tension. Certain kinetic processes may assist the formation of constrictions on the BPDs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1433: Symposium H – Silicon Carbide 2012—Materials, Processing and Devices , 2012 , mrss12-1433-h05-03
Copyright
Copyright © Materials Research Society 2012

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