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Controlling the Aligned Growth of Carbon Nanotubes by Substrate Selection and Patterning

Published online by Cambridge University Press:  15 March 2011

Y. Jung ,
B. Q. Wei ,
R. Vajtai ,
J. Ward ,
R. Zhang ,
G. Ramanath  and
P. M. Ajayan
Y. Jung
Affiliation:
Department of Materials Science and Engineering Rensselaer Polytechnic Institute, Troy, New York 12180-3590
B. Q. Wei
Affiliation:
Department of Materials Science and Engineering Rensselaer Polytechnic Institute, Troy, New York 12180-3590
R. Vajtai
Affiliation:
Department of Materials Science and Engineering Rensselaer Polytechnic Institute, Troy, New York 12180-3590
J. Ward
Affiliation:
Department of Materials Science and Engineering Rensselaer Polytechnic Institute, Troy, New York 12180-3590
R. Zhang
Affiliation:
Motorola Labs, Physical Science Research Laboratories, Tempe, AZ 85284
G. Ramanath
Affiliation:
Department of Materials Science and Engineering Rensselaer Polytechnic Institute, Troy, New York 12180-3590
P. M. Ajayan
Affiliation:
Department of Materials Science and Engineering Rensselaer Polytechnic Institute, Troy, New York 12180-3590
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Abstract

To build nanotube based nanodevices, controlling the growth of aligned carbon nanotubes will be essential. Our group reported a method for growing aligned nanotube selectively on SiO2 surfaces by thermal chemical vapor deposition (CVD) method from xylene-metallocene mixtures. Here we will describe further studies on the roles of shape and thickness of patterned oxide structures for the controlled growth of aligned carbon nanotubes. By designing the shapes and the thickness of silicon oxide patterns with conventional micro fabrication techniques like lithography and dry & wet etching we could control the growth position as well as orientation of aligned carbon nanotubes precisely.

Type
Article
Information
MRS Online Proceedings Library (OPL) , Volume 706: Symposium Z – Making Functional Materials with Nanotubes , 2001 , Z3.11.1
Copyright
Copyright © Materials Research Society 2002

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References

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