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Controlled and Selective Aggregation of Submicrometer Cu-Crystallites on FIB Sensitized p-Si

Published online by Cambridge University Press:  17 March 2011

Adrian Spiegel  and
Patrik Schmuki
Adrian Spiegel
Affiliation:
Swiss Federal Institute of Technology Lausanne (EPFL), Dept. of Materials Science, LTP, CH-1015 Lausanne, SWITZERLAND
Patrik Schmuki
Affiliation:
Dept. of Material Science, LKO, University of Erlangen-Nuremberg, D-91058 Erlangen, GERMANY
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Abstract

Electrochemical deposition of metals and alloys onto metallic substrates plays an important role in many modern technologies. Usually, a photolithographic patterning process is used to produce the desired feature on the substrate surface. An alternative method to patterned metal deposition on semiconductors is presented here: it is based on changing the electrochemical properties of the semiconductor by controlled surface defect creation. A focused ion beam (FIB) was used to introduce defects into p-Si, followed by a selective electrochemical reaction to produce metal structures in the sub-micrometer range.

In this work we study the selective deposition behavior of Cu on FIB sensitized surface locations and show that crystallite growth follows a three- dimensional growth law. Crystallites grow very rapidly in a first phase and reach a size of roughly 200nm after 5s. Factors determining nucleation, growth, and coalescence of metal clusters are identified and investigated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 704: Symposium W – Nanoparticulate Materials , 2001 , W7.10.1
Copyright
Copyright © Materials Research Society 2002

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