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Control of Optical and Electrical Properties of ZnO Films for Photovoltaic Applications

Published online by Cambridge University Press:  21 March 2011

Ralf Hunger ,
Kakuya Iwata ,
Paul Fons ,
Akimasa Yamada ,
Koji Matsubara ,
Shigeru Niki ,
Ken Nakahara  and
Hidemi Takasu
Ralf Hunger
Affiliation:
National Institute of Advanced Industrial Science and Technology (AIST), Energy Electronics Institute, Thin Film Solar Cells Group, Tsukuba, Ibaraki 305-8568, Japan
Kakuya Iwata
Affiliation:
National Institute of Advanced Industrial Science and Technology (AIST), Energy Electronics Institute, Thin Film Solar Cells Group, Tsukuba, Ibaraki 305-8568, Japan
Paul Fons
Affiliation:
National Institute of Advanced Industrial Science and Technology (AIST), Energy Electronics Institute, Thin Film Solar Cells Group, Tsukuba, Ibaraki 305-8568, Japan
Akimasa Yamada
Affiliation:
National Institute of Advanced Industrial Science and Technology (AIST), Energy Electronics Institute, Thin Film Solar Cells Group, Tsukuba, Ibaraki 305-8568, Japan
Koji Matsubara
Affiliation:
National Institute of Advanced Industrial Science and Technology (AIST), Energy Electronics Institute, Thin Film Solar Cells Group, Tsukuba, Ibaraki 305-8568, Japan
Shigeru Niki
Affiliation:
National Institute of Advanced Industrial Science and Technology (AIST), Energy Electronics Institute, Thin Film Solar Cells Group, Tsukuba, Ibaraki 305-8568, Japan
Ken Nakahara
Affiliation:
ROHM Co Ltd., Optical Device R&D Divison, Kyoto, Japan
Hidemi Takasu
Affiliation:
ROHM Co Ltd., Optical Device R&D Divison, Kyoto, Japan
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Abstract

ZnO films were grown by radical-source molecular beam epitaxy (RS-MBE) on sapphire and glass substrates, and they were characterized in terms of Hall mobility and optical transmission. Undoped ZnO films exhibit a low intrinsic defect density and optical properties close to bulk ZnO. By Ga doping, a resistance ρ as low as 2×10−4 Ωcm could be achieved. Balancing high conductivity and low transmission losses due to free carrier absorption in the infrared, the optimum was obtained for ρ=3.4×10−4Ωcm, electron mobility μe=37 cm2/Vs and an average transmission T of 96% in the wavelength range 400-1100 nm. Polycrystalline growth on glass yields slightly reduced but still good film quality (μe=30 cm2/Vs, T=90%). By the incorporation of Mg, conducting Mg0.3Zn0.7O films with an increased band gap up to ∼ 4eV were realized.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 668: Symposium H – II-IV Compound Semiconductor Photovoltaic Materials , 2001 , H2.8
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1. Delahoy, A. E. and Ruppert, A. F. in Proc. of the 2nd World Conf. Photov. Solar Energy Conv., edited by Schmid, J. et al. (Stephens, 1999) pp. 668–671.Google Scholar
2. Nakahara, K., Tanabe, T., Takasu, H. et al., Jpn. J. Appl. Phys. 40, 250 (2001).Google Scholar
3. Tropf, W.J. and Thomas, M.E., Aluminium Oxide (Al2O3) Revisited, Handbook of Optical Constants of Solids III, ed. Palik, E.D., (Academic Press, 1998), p. 653.Google Scholar
4. Mollwo, E., Z. Angew. Physik 6, 257 (1954); W. L. Bond, J. Appl. Phys. 36, 1674 (1965).Google Scholar
5. Harbecke, B.: Appl. Phys. B39, 165 (1986).Google Scholar
6. Ibach, H. and Lüth, H., Festkörperphysik (Springer, Berlin, 1990).Google Scholar
7. Burstein, E., Phys. Rev. 93, 632 (1954).Google Scholar
8. Hirata, G. A., McKittrick, J., Siqueiros, J. et al., J. Vac. Sci. Technol. A14 (3), 791 (1996).Google Scholar
9. Tominaga, K., Manabe, H., Umezu, N. et al., J. Vac. Sci. Technol. A15 (3), 1074 (1997).Google Scholar
10. Negami, T., Minemoto, T., Hashimoto, Y. et al., Proc. 28th IEEE Photov. Spec. Conf., Anchorage, AK, USA, (IEEE publishing, in press).Google Scholar
11. Ickert, L. and Schneider, H. G., Wachstum einkristalliner Schichten, (Springer, 1983).Google Scholar
12. Nakada, T., Murakami, N., and Kunioka, A., Mat. Res. Soc. Symp. Proc. 426, 411 (1996).Google Scholar
13. Hirasawa, H., Yoshida, M., Nakamura, S. et al., Sol. En. Mater. Sol. Cells 67, 231 (2001).Google Scholar
14. Rau, U. and Schock, W., Appl. Phys. A69 (2), 131 (1999).Google Scholar