Hostname: page-component-586b7cd67f-rcrh6 Total loading time: 0 Render date: 2024-11-28T17:54:40.006Z Has data issue: false hasContentIssue false
  • English
  • Français

Control of heterointerface and strain mapping in Au catalyzed axial Si-Si1-xGex nanowires

Published online by Cambridge University Press:  07 July 2014

P. Periwal ,
G. Patriarche ,
L. Latu-Romain ,
B. Salem ,
F. Bassani  and
T. Baron
P. Periwal
Affiliation:
Laboratoire des Technologies de la Microélectronique (LTM), UMR 5129 CNRS-UJF, CEA Grenoble, 17 rue des Martyrs, 38054 Grenoble, France
G. Patriarche
Affiliation:
Laboratoire de Photonique et de Nanostructures (LPN)-CNRS, Route de Nozay, 91460 Marcoussis, France
L. Latu-Romain
Affiliation:
Laboratoire des Technologies de la Microélectronique (LTM), UMR 5129 CNRS-UJF, CEA Grenoble, 17 rue des Martyrs, 38054 Grenoble, France
B. Salem
Affiliation:
Laboratoire des Technologies de la Microélectronique (LTM), UMR 5129 CNRS-UJF, CEA Grenoble, 17 rue des Martyrs, 38054 Grenoble, France
F. Bassani
Affiliation:
Laboratoire des Technologies de la Microélectronique (LTM), UMR 5129 CNRS-UJF, CEA Grenoble, 17 rue des Martyrs, 38054 Grenoble, France
T. Baron
Affiliation:
Laboratoire des Technologies de la Microélectronique (LTM), UMR 5129 CNRS-UJF, CEA Grenoble, 17 rue des Martyrs, 38054 Grenoble, France
Get access

Abstract

Axial heterostructure nanowires with Si and SiGe segments have been grown using Au metal seed as catalyst by chemical vapor deposition (CVD) via vapor-liquid-solid process (VLS). We report on the effect of growth intervention on the droplet stability which in turn modifies NW morphology and interfacial abruptness. Growth stop of 2 minutes on transition from one material to another have been demonstrated to suppress reservoir effect by Au catalyst. The two SiGe/Si and Si/SiGe heterointerfaces are found to be assymetric. The former being diffused while the latter one is sharp. Furthermore, geometric phase analysis reports elastic deformation at the heterointerface. Nanowire undergoes rotation in both clock and anticlockwise direction at their sidewalls with an angle of 2.5° in order to accommodate this strain.

Keywords

chemical vapor deposition (CVD) (chemical reaction)nanostructurescanning transmission electron microscopy (STEM)
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1707: Symposium UU – Semiconductor Nanowires—Synthesis, Properties and Applications , 2014 , mrss14-1707-uu01-06
Copyright
Copyright © Materials Research Society 2014 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Cui, Y., Wei, Q., Park, H., Lieber, C. M., Science, 293 (2001) 1289 CrossRefGoogle Scholar
Boukai, A. I., Bunimovich, Y., Kheli, J. T., Yu, J.Y., Goddard, W. A., Heath, J.R., Nature, 451 (2007), 168 CrossRefGoogle Scholar
Rosaz, G., Salem, B., Pauc, N., Potié, A., Gentile, P., Appl. Phys. Lett., 99 (2011), 193107–11CrossRefGoogle Scholar
Ionescu, A. M., Riel, H., Nature, 479 (2011), 329 CrossRefGoogle Scholar
Bassani, F., Periwal, P., Salem, B., Chevalier, N., Mariolle, D., Audoit, G., Gentile, P., Baron, T., Phys. Status Solidi RRL, (2014), 1 Google Scholar
Periwal, P., Baron, T., Latu-Romain, L., Patriarche, G., Gentile, P., Salem, B., and Bassani, F., J. Vac. Sci. Technol. A, 32 (2014), 031101 CrossRefGoogle Scholar
Wagner, R. S., Ellis, W. C., Appl. Phys. Lett., 4 (1964), 89 CrossRefGoogle Scholar
Ross, F. M., Rep. Prog. Phys.,73 (2010), 114501 CrossRefGoogle Scholar
Li, N., Tan, T. Y., Gosele, U., Appl. Phys. A., 90 (2008), 591 CrossRefGoogle Scholar
Clark, T. E., Nimmatoori, P., Keong Lew, K., Pan, L., Redwing, J. M., Dickey, E. C., NanoLett.,8 (2008) 1246 CrossRefGoogle Scholar
Wen, C. Y., Reuter, M. C., Bruley, J., Tersoff, J., Kodambaka, S., Stach, E. A., Ross, F. M., Science., 326 (2009), 1247 CrossRefGoogle Scholar
Perea, D. E., Li, N., Dickerson, R. M., Misra, A., Picraux, S. T., NanoLett., 11(2011), 3117 CrossRefGoogle Scholar
Chou, Y., Wen, C. Y., Reuter, M. C., Su, D., Stach, E. A., Ross, F. M., ACS Nano., 6 (2012), 6407 CrossRefGoogle Scholar
Dick, K. A., Kodambaka, S., Reuter, M. C., Deppert, K., Samuelson, L., Seifert, W., Wallenberg, L.R., Ross, F. M., NanoLett., 7 (2007) 1817 CrossRefGoogle Scholar
Potié, A., Baron, T., Latu-Romain, L., Rosaz, G., Salem, B., Montès, L., Gentile, P., Kreisel, J., Roussel, H., J. Appl. Phys. 110 (2011) 024311.CrossRefGoogle Scholar
Oehler, F., Gentile, P., Baron, T., Ferret, P., Nanotechnology, 20 (2009), 475307 CrossRefGoogle Scholar
Liu, Q.L., Zhao, C.W., Xing, Y.M., Su, S.J., Cheng, B.W., Optics & Laser in engineering, 50 (2012), 796 CrossRefGoogle Scholar