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Control of Grain Size and Texture of Poly-Si with Atomic Hydrogen Under In Situ Ellipsometric Observation

Published online by Cambridge University Press:  28 February 2011

K. Nakamura ,
T. Akasaka ,
D. He  and
I. Shimizu
K. Nakamura
Affiliation:
Tokyo Institute of Technology, The Graduate School, Nagatsuta, Midori- ku, Yokohama, Japan
T. Akasaka
Affiliation:
Tokyo Institute of Technology, The Graduate School, Nagatsuta, Midori- ku, Yokohama, Japan
D. He
Affiliation:
Tokyo Institute of Technology, The Graduate School, Nagatsuta, Midori- ku, Yokohama, Japan
I. Shimizu
Affiliation:
Tokyo Institute of Technology, The Graduate School, Nagatsuta, Midori- ku, Yokohama, Japan
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Abstract

A systematic study was performed to fabricate poly-Si thin films on glass substrates. Amorphous tissues were efficiently removed by forming a textured structure with the aid of atomic hydrogen. According to the real-time observation by spectroscopic ellipsometry(SE), the grain growth was enhanced by permeation of atomic hydrogen into the sub-surface. Hall measurements were made over a rather wide temperature range: 100 K--350 K. A rather high Hall mobility of 20 cm2/Vs or more was obtained at room temperature due to the reduction of amorphous tissues remaining at grain boundaries.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 358: Symposium F – Microcrystalline and Nanocrystalline Semiconductors , 1994 , 871
Copyright
Copyright © Materials Research Society 1995

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References

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