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Continuum Model of Epitaxial Roughening

Published online by Cambridge University Press:  15 February 2011

Jacques G. Amar  and
Fereydoon Family
Jacques G. Amar
Affiliation:
Department of Physics, Emory University, Atlanta, GA 30322
Fereydoon Family
Affiliation:
Department of Physics, Emory University, Atlanta, GA 30322
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Abstract

A continuum equation for epitaxial and thin-film growth in which diffusion along the surface is the dominant relaxation process and the full diffusion along the surface is taken into account, is studied. The interface width is found to grow linearly with time (height) in agreement with recent experiments. At late times dynamic scaling breaks down and the surface develops a characteristic morphology which is similar to that found in experiments.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 317: Symposium B – Mechanisms of Thin Film Evolution , 1993 , 117
Copyright
Copyright © Materials Research Society 1994

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References

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