Hostname: page-component-586b7cd67f-2plfb Total loading time: 0 Render date: 2024-11-28T03:08:53.625Z Has data issue: false hasContentIssue false
  • English
  • Français

Contact Resistance Study of Pt, Ni and Au on La0.7Sr0.3MnO3 (LSMO)/Si for Heterojunction Device Applications

Published online by Cambridge University Press:  05 August 2013

Rajashree Nori ,
Pankaj Kumbhare ,
Prashanth Paramahans ,
S. N. Kale ,
R. Pinto  and
V. Ramgopal Rao
Rajashree Nori
Affiliation:
Center of Excellence in Nanoelectronics, Indian Institute of Technology-Bombay, Mumbai 400076, India
Pankaj Kumbhare
Affiliation:
Center of Excellence in Nanoelectronics, Indian Institute of Technology-Bombay, Mumbai 400076, India
Prashanth Paramahans
Affiliation:
Center of Excellence in Nanoelectronics, Indian Institute of Technology-Bombay, Mumbai 400076, India
S. N. Kale
Affiliation:
Department of Applied Physics, Defence Institute of Advanced Technology, Pune 411025, India
R. Pinto
Affiliation:
Center of Excellence in Nanoelectronics, Indian Institute of Technology-Bombay, Mumbai 400076, India
V. Ramgopal Rao
Affiliation:
Center of Excellence in Nanoelectronics, Indian Institute of Technology-Bombay, Mumbai 400076, India
Get access

Abstract

Achieving low resistance ohmic contacts for heavily doped devices is critical towards ensuring that contact resistance does not dominate the device performance. Here, we report contact resistance studies done on Pt/LSMO, Ni/LSMO and Au/LSMO metal-semiconductor interfaces. Phase-pure LSMO thin films deposited on n+ Si substrates were lithographically patterned and metallized to produce circular transfer length method (CTLM) based specific contact resistivity (ρc) and transfer length (LT) evaluation structures. Based on the electrical performance, interfacial reactivity and mechanical stability of the three metal junctions, the lowest ρc and LT metal for LSMO films on Si is identified for device applications.

Keywords

electronic materialsemiconductingmetal-insulator transition
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1507: Symposium AA – Oxide Nanoelectronics and Multifunctional Dielectrics , 2013 , mrsf12-1507-aa12-39
Copyright
Copyright © Materials Research Society 2013 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Kang, Y. M., Ulyanov, A. N., Shin, G.-M., Lee, S.-Y., Yoo, D.-G., and Yoo, S.-I., J. Appl. Phys. 105, 07D711(2009).CrossRefGoogle Scholar
Han, P., Jin, K., Lu, H., Zhuo, Q.-L., Zhuo, Y.-L., and Yang, G.-Z., Appl. Phys. Lett. 91, 182102 (2007).CrossRefGoogle Scholar
Al Ahmad, M., Plana, R., Cheon, C. I., and Yun, E.-J., IEEE Trans. Electron Devices 56 (4), 665 (2009).CrossRefGoogle Scholar
Tiwari, A., Jin, C., Kumar, D., and Narayan, J., Appl. Phys. Lett. 83 (9), 1773 (2003).CrossRefGoogle Scholar
Lord, K., Hunter, D., Williams, T. M., and Pradhan, A. K., Appl. Phys. Lett. 89, 052116–052119 (2006).CrossRefGoogle Scholar
Michaelson, Herbert B., J. Appl. Phys. 48 (11), 4729 (1977).CrossRefGoogle Scholar
Qiu, J., Jin, K-J, Han, P., Lu, H-B, Hu, C-L, Wang, B-P, and Yang, G-Z, Eur. Phys. Lett. 79, 57004 (2007).CrossRefGoogle Scholar
Schroder, Dieter K., in Semiconductor Material and Device Characterization (John Wiley & Sons, New Jersey, 2006) pp. 131–164.Google Scholar
Yang, F., Kemik, N., Biegalski, M. D., Christen, H. M., Arenholz, E. and Takamura, Y., Appl. Phys. Lett. 97, 092503 (2010).CrossRefGoogle Scholar