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Computer Simulation of Decaborane Implantation into Silicon, Annealing and Re-crystallization of Silicon

Published online by Cambridge University Press:  21 March 2011

Zinetulla Insepov  and
Isao Yamada
Zinetulla Insepov
Affiliation:
Laboratory of Advanced Science &Technology for Industry, Himeji Institute of Technology, 3-1-2 Kouto, Kamigori, Ako, Hyogo 678-1205, Japan
Isao Yamada
Affiliation:
Laboratory of Advanced Science &Technology for Industry, Himeji Institute of Technology, 3-1-2 Kouto, Kamigori, Ako, Hyogo 678-1205, Japan
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Abstract

Molecular Dynamics (MD) and Activation-Relaxation Technique (ART) models of decaborane ion implantation into Si and following rapid thermal annealing (RTA) processes have been developed. The B and Si atomic positions for implantation of accelerated decaborane ions, with total energy 3.5- 15 KeV, into Si substrate were obtained by MD simulation. The main difference between monomer and decaborane ion implantation with the same doses is the formation of a large amorphized area in a subsurface region for the decaborane case. The number of displaced Si atoms shows non-linear energy dependence at low impact energies. At higher energies ofthe investigated range of the decaborane energy range, however, a linear dependence is observed in accordancewith the prediction of the Kinchin-Pease formula. A new method that incorporates Activation-Relaxation Technique (ART) with MD has been developed and used to study re-crystallization of Si amorphized in the implantation process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 669: Symposium J – Si Front-End Processing–Physics and Technology of Dopant-Defect Interactions III , 2001 , J4.7
Copyright
Copyright © Materials Research Society 2001

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