Hostname: page-component-586b7cd67f-gb8f7 Total loading time: 0 Render date: 2024-11-30T23:17:55.045Z Has data issue: false hasContentIssue false
  • English
  • Français

Composition modulation and local structure in strained diluted GaInNAs nitride alloy thin layers on GaAs substrates

Published online by Cambridge University Press:  01 February 2011

Arnaud Metsue  and
Catherine Priester
Arnaud Metsue
Affiliation:
[email protected], IEMN, ISEN, BP 60069, VILLENEUVE D'ASCQ, CEDEX, 59652, France, (+33) 320 197 911, (+33) 320 197 884
Catherine Priester
Affiliation:
[email protected], CNRS-UMR 8520
Get access

Abstract

The theoretical study reported here is devoted to diluted GaInNAs nitride alloys, and focuses on correlation between local chemical atomic neighborhood and atomic distances. The model used is Valence Force Field approximation, and we model a periodic Ga1−xInxNyAs1−y alloy film deposited on a GaAs substrate. The surface is dimerised (for simplicity we consider 2×1 anion rich surfaces). First starting from a random film, first and second nearest neighbor distances are calculated, and the corresponding histogram drawn. Then a pseudo-annealing process is simulated by allowing the N atoms to choose their optimal location. This pseudo-annealing strongly enhances the number of In-N bonds, in agreement to experimental studies. From this statistical study, fine structure of each peak of the histograms is shown to be not directly related to a given surrounding chemical distribution up to 3rd nearest neighbors. The positions (in distance) of the peaks appear not to be modified by alloy composition nor alloy segregation, which only alter relative intensities and peak shapes. Last, we consider stripes of In-rich and In-poor zones: calculated energy variations show a strong tendency for N atoms to completely desert In-poor zones.

Keywords

alloynitridecrystal growth
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 891: Symposium EE – Progress in Semiconductor Materials V – Novel Materials and Electronics and Optoelectronic Applications , 2005 , 0891-EE10-29
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Kim, K., Zunger, A., Phys. Rev. Lett. 86, 2609 (2001)Google Scholar
[2] Chauveau, J.-M. et al. , Journal of Crystal Growth, 251, 383–387 (2003),Google Scholar
Chauveau, J.-M., Trampert, A., Ploog, K. H., Pinault, M.-A., and Tournié, E. Appl. Phys. Lett. 82, 3451 (2003)Google Scholar
[3] Jaschke, G., Averbeck, R., Geelhaar, L. and Riechert, H., Journal of Crystal Growth, 278, 224–228 (2005)Google Scholar
[4] Uno, K. et al. , Japanese Journal of Applied Physics, 43, No 4B, p. 1944–1946 (2004)Google Scholar
[5] Lordi, V., Gambin, V., Friedrich, S., Funk, T., Takizawa, T., Uno, K., and Harris, J. S. Phys. Rev. Lett. 90, 145505 (2003)Google Scholar
[6] Lordi, V., Yuen, H. B., Bank, S. R., Wistey, M. A., Harris, J. S., and Friedrich, S. Phys. Rev. B 71, 125309 (2005)Google Scholar
[7] Ciatto, G. et al. Phys. Rev. B 71, 115210 (2005)Google Scholar
[8] Priester, C. and Grenet, G., Phys Rev B 61, 16029 (2000))Google Scholar
[9] Wallart, X. and Priester, C., Phys. Rev. B 68, 235314 (2003)Google Scholar
[10] Litvinov, D., Gerthsen, D., Rosenauer, A., Hetterich, M., Grau, A., Gilet, Ph., and Grenouillet, L., Applied Physics Letters 85, 3743–3745, 2004 Google Scholar