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Composition and Size Effects on the Optical Properties of Isolated Silicon-Germanium Nanowires

Published online by Cambridge University Press:  11 January 2012

Houssem Kallel ,
Abdallah Chehaidar ,
Arnaud Arbouet ,
Thierry Baron ,
Alexis Potié ,
Bassem Salem  and
Vincent Paillard
Houssem Kallel
Affiliation:
Université Paul Sabatier, Université de Toulouse, 118 route de Narbonne, 31062 Toulouse cedex 9, France. CEMES-CNRS, 29 rue Jeanne Marvig, 31055 Toulouse Cedex 4, France. Département de Physique, Faculté des Sciences de Sfax, Université de Sfax, B.P. 1171, 3000 Sfax, Tunisie.
Abdallah Chehaidar
Affiliation:
Département de Physique, Faculté des Sciences de Sfax, Université de Sfax, B.P. 1171, 3000 Sfax, Tunisie.
Arnaud Arbouet
Affiliation:
Université Paul Sabatier, Université de Toulouse, 118 route de Narbonne, 31062 Toulouse cedex 9, France. CEMES-CNRS, 29 rue Jeanne Marvig, 31055 Toulouse Cedex 4, France.
Thierry Baron
Affiliation:
LTM, CNRS-CEA-LETI, 17 rue des Martyrs, 38054 Grenoble cedex 9, France.
Alexis Potié
Affiliation:
LTM, CNRS-CEA-LETI, 17 rue des Martyrs, 38054 Grenoble cedex 9, France.
Bassem Salem
Affiliation:
LTM, CNRS-CEA-LETI, 17 rue des Martyrs, 38054 Grenoble cedex 9, France.
Vincent Paillard
Affiliation:
Université Paul Sabatier, Université de Toulouse, 118 route de Narbonne, 31062 Toulouse cedex 9, France. CEMES-CNRS, 29 rue Jeanne Marvig, 31055 Toulouse Cedex 4, France.
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Abstract

Silicon and Germanium nanowires (NWs) have shown a strong ability to enhance both the absorption and scattering of light. Tailoring the optical properties of Si or Ge NWs can be obtained by adjusting the nanowire diameter. Another parameter that can be used is the chemical composition of silicon-germanium (Si1-xGex-NWs) alloys. In this work, we perform a numerical study on the optical properties of single Si1-xGex-NWs based on the Lorenz-Mie theory. The effects of Ge composition, light polarization and angle of incidence on the nanowire optical properties are investigated.

Keywords

optical propertiessemiconductingnanostructure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1408: Symposium BB – Functional Nanowires and Nanotubes , 2012 , mrsf11-1408-bb04-03
Copyright
Copyright © Materials Research Society 2012

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References

REFERENCES

1. Li, Y., Qian, F., Xiang, J. and Lieber, C. M., Mater. Today 8, 18–27 (2006).Google Scholar
2. Yang, P., Yang, R., and Fardi, M., Nanolett. 10, 1529–1536 (2010).Google Scholar
3. Kelzenberg, M. D., Boettcher, S. W., Petykiewicz, J. A., Turner-Evans, D. B., Putnam, M. C., Warren, E. L., Spurgeon, J. M., Briggs, R. M., Lewis, N.S. and Atwater, H. A., Nature Mat. 9, 239–244 (2010).Google Scholar
4. Ding, G.-H., Chan, C. T., Zhang, Z. Q. and Sheng, P., Phys. Rev. B 71, 205302 (2005).Google Scholar
5. Cao, L., Nabet, B. and Spanier, J. E., Phys. Rev. Lett. 96, 157402 (2006).Google Scholar
6. Cao, L., Fan, P., Vasudev, A. P., White, J. S., Yu, Z., Cai, W., Schuller, J. A., Fan, S. and Brongersma, M. L., NanoLett. 10, 439–445 (2010).Google Scholar
7. Cao, L., Fan, P., Barnard, E. S., Brown, A. M. and Brongersma, M. L., NanoLett. 10, 2649–2654 (2010).Google Scholar
8. Cao, L., White, J. S., Park, J.-S., Schuller, J. A., Clemens, B. M. and Brongersma, M. L., Nature Mat. 8, 643–647 (2009).Google Scholar
9. Cao, L., Park, J.-S., Fan, P., Clemens, B. and Brongersma, M. L.., NanoLett. 10, 1229–1233 (2010).Google Scholar
10. Brönstrup, G., Jahr, N., Leiterer, C., Csaki, A., Fritzsche, W. and Christiansen, S., ACS Nano 4, 7113–7122 (2010).Google Scholar
11. Bohren, C. F. and Huffman, D. R., in Absorption and Scattering of Light by Small Particles (John Wiley and Sons, New York, NY, 1998) pp. 194–208.Google Scholar
12. Humlek, J., Garriga, M., Alonso, M. I. and Cardona, M. J., Appl. Phys. 65, 2827–2832 (1989).Google Scholar
13. Humlek, J., in Properties of Silicon Germanium and SiGe:Carbon, edited by Kasper, E. and Lyutovich, K. (INSPEC, Institution of Electrical Engineers, London, 2000), pp. 249–259.Google Scholar
14. Penn, C., Fromherz, T. and Bauer, G., in Properties of Silicon Germanium and SiGe:Carbon, edited by Kasper, E. and Lyutovich, K. (INSPEC, Institution of Electrical Engineers, London, 2000), pp. 125–134.Google Scholar
15. Poborchii, V., Tada, T., Morita, Y., Kanayama, T. and Geshev, P. I., Phys. Rev. B 83, 153412 (2011).Google Scholar