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Competition Between Gettering by Implantation-Induced Cavities in Silicon and Internal Gettering Associated with SiO2 Precipitation

Published online by Cambridge University Press:  15 February 2011

S. A. McHugo ,
E. R. Weber ,
S. M. Myers  and
G. A. Petersen
S. A. McHugo
Affiliation:
Dept. of Materials Science and Mineral Eng., University of California, Berkeley, CA 94720
E. R. Weber
Affiliation:
Dept. of Materials Science and Mineral Eng., University of California, Berkeley, CA 94720
S. M. Myers
Affiliation:
Sandia National Laboratories, P.O. Box 5800, Albuquerque, NM 87185
G. A. Petersen
Affiliation:
Sandia National Laboratories, P.O. Box 5800, Albuquerque, NM 87185
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Abstract

The gettering behavior of Cu and Fe was investigated in CZ silicon containing both internal-gettering sites in the bulk due to SiO2 precipitation and a device-side layer of cavities formed by He ion implantation and annealing. The objective was to quantify the effectiveness of impurity gettering at cavities relative to the widely used internal-gettering process. Both rapid thermal anneals and furnace anneals were used during the gettering sequences to reveal transient effects as well as the final, thermodynamically-equilibrated condition. For temperatures of 700, 800 and 850°C, the cavity gettering was observed to dominate the internal gettering as indicated both by the number of gettered atoms in the cavities and the residual solution concentration in the device region. The results are interpreted in detail by numerically solving the diffusion equation with sink-related source terms based on earlier, fundamental studies of the underlying mechanisms of internal and cavity gettering.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 439: Symposium B – Microstructure Evolution During Irradiation , 1996 , 149
Copyright
Copyright © Materials Research Society 1997

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