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A Comparison of RTO and Furnace Oxides

Published online by Cambridge University Press:  28 February 2011

Marie E. Burnham ,
Ronald N. Legge ,
Jaim Nulman Jaim Nulman ,
Peter L. Fejes  and
James F. Brown
Marie E. Burnham
Affiliation:
SRDL, Motorola Inc., 5005 E. McDowell, Phoenix AZ.
Ronald N. Legge
Affiliation:
SRDL, Motorola Inc., 5005 E. McDowell, Phoenix AZ.
Jaim Nulman Jaim Nulman
Affiliation:
AG Associates, Borregas, CA., 1325 Borregas Ave., Sunnyvale, CA 94089
Peter L. Fejes
Affiliation:
SRDL, Motorola Inc., 5005 E. McDowell, Phoenix AZ.
James F. Brown
Affiliation:
SRDL, Motorola Inc., 5005 E. McDowell, Phoenix AZ.
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Abstract

The original intent of this study was to compare rapid thermal, thin (80-100Å) gate oxides with standard, furnace-grown, thin gate oxides for endurance. Wafer processing before gate oxide growth was chosen to duplicate processing used ina typical non-volatile memory product. In particular, care was taken to duplipate pre- and post- gate growth processing of field oxide isolated polysilicon capacitors for all wafers in order to eliminate the previous difficulties in comparing oxides when different cleans and processing steps are used.[1] Substrate defects, atypical to this process, were presumably introduced during the initial wafer cleaning and scattered the time-to-breakdown (TTB) values during a constant current stress of these oxides to the point where statistical comparison of TTB averages was dubious. However, for unannealed wafers and for post polysilicon definition heat treatments of 900°C, RTO oxides grown with HCL had the same oxide trapping rate as the furnace oxides grown with TCA and RTO oxides grown in pure O2 had a faster trapping rate. Higher temperature post polysilicon definition heat treatments had different effects. RTO oxides exhibited better yield than the furnace oxides. These results illustrate the differences between RTO and furnace oxidation in the presence of non-ideal wafer substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 92: Symposium B – Rapid Thermal Processing of Electronic Materials , 1987 , 115
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

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