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Comparison Of F2 Plasma Chemistries For Deep Etching Of SiC

Published online by Cambridge University Press:  21 March 2011

K. P. Lee ,
P. Leerungnawarat ,
S. J. Pearton ,
F. Ren ,
S. N. G. Chu  and
C.-M. Zetterling
K. P. Lee
Affiliation:
Materials Science and Engineering University of Florida, Gainesville FL 32611 USA
P. Leerungnawarat
Affiliation:
Materials Science and Engineering University of Florida, Gainesville FL 32611 USA Current address: Lucent Technologies, Reading, PA.
S. J. Pearton
Affiliation:
Materials Science and Engineering University of Florida, Gainesville FL 32611 USA
F. Ren
Affiliation:
Chemical Engineering University of Florida, Gainesville FL 32611 USA
S. N. G. Chu
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill NJ 07974 USA
C.-M. Zetterling
Affiliation:
Department of Electronics, Royal Institute of Technology (KTH), Kista, Sweden
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Abstract

A number of F2-based plasma chemistries (NF3, SF6, PF5 and BF3) were investigated for high rate etching of SiC. The most advantageous of these is SF6, based on the high rate (0.6 μm · min−1) it achieves and its relatively low cost compared to NF3. The changes in electrical properties of the near-surface region are relatively minor when the incident ion energy is kept below approximately 75 eV. At a process pressure of 5 mTorr, the SiC etch rate falls-off by ∼15 % in 30 μm diameter via holes compared to larger diameter holes (> 60 μm diameter) or open areas on the mask.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 640: Symposium H – Silicon Carbide-Materials, Processing, and Devices , 2000 , H7.7
Copyright
Copyright © Materials Research Society 2001

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