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A Comparative Study of MOCVD Produced ZnO Films Doped with N, As, P and Sb
Published online by Cambridge University Press: 01 February 2011
Abstract
ZnO thin films are of interest for an array of applications; including: light emitters, photovoltaics, sensors and transparent contacts among others. Of particular interest is the potential to produce p-type layers from which p-n junction devices could be routinely produced. While it is fairly routine for MOCVD to produce n-type films with doping concentrations in the 10E20 cm-3 range and resistivities below 10E-3 ohm-cm; it is very difficult to produce measurable p-type ZnO. We report on our efforts with doping films p-type using N gas sources and metalorganic sources of P, As, and Sb. Films showing acceptor bands by photoluminescence have been demonstrated; however reliable electrical measurements remain difficult. Specific problems include achieving low resistance ohmic contacts, accounting for the photo-responsiveness of ZnO films and sensitivity limits in Hall measurements of low-doped and compensated materials. The presentation will review deposition parameters, produced and processed films and material characteristics.
- Type
- Research Article
- Information
- MRS Online Proceedings Library (OPL) , Volume 957: Symposium K – Zinc Oxide and Related Materials , 2006 , 0957-K07-48
- Copyright
- Copyright © Materials Research Society 2007