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Comparative Study of Implanted and Sputtered Systems of Si Nanograins Embedded In SiO2

Published online by Cambridge University Press:  10 February 2011

S. Charvet ,
R. Madelon ,
R. Rizk ,
B. Garrido ,
A. Pó;rez Rodríguez ,
M. López ,
O González Varona  and
J. R. Morante
S. Charvet
Affiliation:
LERMAT-ISMRA, Unité CNRS 6004, 6 Bd Maréchal Juin, 14050 Caen, France.
R. Madelon
Affiliation:
LERMAT-ISMRA, Unité CNRS 6004, 6 Bd Maréchal Juin, 14050 Caen, France.
R. Rizk
Affiliation:
LERMAT-ISMRA, Unité CNRS 6004, 6 Bd Maréchal Juin, 14050 Caen, France.
B. Garrido
Affiliation:
EME, Departament de Física Aplicada i Electrònica, Universitat de Barcelona, Avda Diagonal 645-647, 08028 Barcelona, Spain.
A. Pó;rez Rodríguez
Affiliation:
EME, Departament de Física Aplicada i Electrònica, Universitat de Barcelona, Avda Diagonal 645-647, 08028 Barcelona, Spain.
M. López
Affiliation:
EME, Departament de Física Aplicada i Electrònica, Universitat de Barcelona, Avda Diagonal 645-647, 08028 Barcelona, Spain.
O González Varona
Affiliation:
EME, Departament de Física Aplicada i Electrònica, Universitat de Barcelona, Avda Diagonal 645-647, 08028 Barcelona, Spain.
J. R. Morante
Affiliation:
EME, Departament de Física Aplicada i Electrònica, Universitat de Barcelona, Avda Diagonal 645-647, 08028 Barcelona, Spain.
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Abstract

Si nanograins embedded in silicon oxide matrix have been obtained by thermal annealing at 1100°C during one hour, either after implantation of Si+ into thermal SiO2 layers or after magnetron cosputtering of both Si and SiO2. The spectral distribution of the photoluminescence (PL) in both systems is similar and peaks in the red visible region (1.45–1.60 eV). The results obtained indicate that for high PL efficiency, the films have to be annealed at temperatures high enough to achieve phase separation. This was observed from the gradual shift of the infrared bands of the silica matrix toward those of thermal SiO2, together with the appearance of the crystalline silicon Raman vibrational mode in the spectra. The similar behavior of samples obtained by ion implantation and by sputtering suggests a more complex origin of the PL than quantum confinement.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 486: Symposium H – Materials & Devices for Silicon Based Optoelectronics , 1997 , 225
Copyright
Copyright © Materials Research Society 1998

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