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Comparative Characteristics of GaAs Detectors and Silicon Pixel Detectors with Internal Amplification

Published online by Cambridge University Press:  01 February 2011

Gennady I. Koltsov ,
V. N. Murashev ,
A. P. Chubenko ,
R. A. Mukhamedshin ,
G. I. Britvich ,
A. V. Chernykh  and
S. V. Chernykh
Gennady I. Koltsov
Affiliation:
[email protected], State Technological University "Moscow Institute of Steel and Alloys", Department of Semiconductor Electronics and Physics of Semiconductors, Moscow, Russian Federation
V. N. Murashev
Affiliation:
[email protected], State Technological University "Moscow Institute of Steel and Alloys", Department of Semiconductor Electronics and Physics of Semiconductors, Moscow, Russian Federation
A. P. Chubenko
Affiliation:
[email protected], Lebedev Physical Institute of RAS, Moscow, Russian Federation
R. A. Mukhamedshin
Affiliation:
[email protected], Institute for Nuclear Research of RAS, Moscow, Russian Federation
G. I. Britvich
Affiliation:
[email protected], Institute for High Energy Physics, Protvino, Russian Federation
A. V. Chernykh
Affiliation:
[email protected], State Technological University “Moscow Institute of Steel and Alloys”, Department of Semiconductor Electronics and Physics of Semiconductors, Moscow, Russian Federation
S. V. Chernykh
Affiliation:
[email protected], State Technological University "Moscow Institute of Steel and Alloys", Department of Semiconductor Electronics and Physics of Semiconductors, Moscow, Russian Federation
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Abstract

Comparative analysis of GaAs semiconductor radiation detectors and silicon pixel ones with internal amplification elaborated for detection of nuclear radiation is carried out. Electrophysical and spectral characteristics are compared.

Both the detector types have high sensitivity to α, β and γ radiation and can be applied in space and accelerator experiments for energy determination of elementary particles as well as in astrophysics, transmission and reflecting electron microscopy, medicine, biology and so on.

Keywords

SiIII-Vmicroelectronics
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1108: Symposium A – Performance and Reliability of Semiconductor Devices , 2008 , 1108-A06-05
Copyright
Copyright © Materials Research Society 2009

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References

REFERENCES

1. Dalla Betta, G.F. et al., Nuclear Instruments and Methods in Physics Research, A458 (2001), p. 275–280.Google Scholar
2. Koltsov, G. I., Murashev, V. N., Mukhamedshin, R. A. and Chubenko, A. P., Collected articles “IT in a science, the engineering and education” MSAIECS, 3–11 (2005)Google Scholar
3. Chmill, V. et al., Nucl. Instr. and Methods in Phys. Res., A438 (1999), p. 362–367.Google Scholar
4. Ayzenshtat, G. I., Bakin, N. N., Budnitsky, D. L. et al., Nucl. Instr. and Methods in Phys. Res., A466 (2001), p. 25–32.Google Scholar