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Combinatorial Optimization of Low Electrical Resistivity Pd-based Thin Film Metallic Glass

Published online by Cambridge University Press:  26 February 2011

Ryusuke Yamauchi ,
Seiichi Hata ,
Junpei Sakurai  and
Akira Shimokohbe
Ryusuke Yamauchi
Affiliation:
[email protected], Tokyo Insititute of Technology, Mechano-Micro Engineering, R2-37,, 4259 Nagatsuta, Midoriku, Yokohama, Kanagawa, 226-8503, Japan, +81-45-924-5094, +81-45-924-5046
Seiichi Hata
Affiliation:
[email protected], Tokyo Institute of Technology, Frontier Collaborative Research Center, Japan
Junpei Sakurai
Affiliation:
[email protected], Tokyo Institute of Technology, Precision and Intelligence Laboratory, Japan
Akira Shimokohbe
Affiliation:
[email protected], Tokyo Institute of Technology, Precision and Intelligence Laboratory
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Abstract

In order to optimize low electrical resistivity compositions of Pd-based thin film metallic glass (TFMG), Combinatorial arc plasma deposition (CAPD) was employed. A Pd-based continuous compositionally-graded thin film was deposited using CAPD in the experiments. To deposit the composition-grade of the Pd-rich thin film, the number of shots and the plasma strength were controlled. The deposited thin film was separated into 1,089 samples for measurements. The thickness, composition, phase and relative resistivity of these samples were measured respectively. And three amorphous CAPD samples exhibiting low relative resistivity were selected. To determine whether these were TFMG compositions, their compositions were reproduced on sputter-deposited samples and their Tg and Tx were measured. It was found that the sample of Pd81Cu5Si14 at.% showed the lowest absolute resistivity (60 μΩ·cm) and the largest temperature range of supercooled liquid region (SCLR) i.e., 60 K among all samples. The resistivity was 19% lower than conventional Pd-based TFMG and SCLR was two and half times as large. The tensile strength was higher than the conventional TFMG and the Young's modulus was lower than the conventional one.

Keywords

combinatorial synthesisamorphousPd
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 894: Symposium LL – Combinatorial Methods and Informatics in Materials Science , 2005 , 0894-LL02-05
Copyright
Copyright © Materials Research Society 2006

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References

REFERENCES

1. Hata, S., Yamauchi, R., Sakurai, J. and Shimokohbe, A., Jpn. J. Appl. Phys. (accepted)Google Scholar
2. Turnbull, D., Trans. AIME 221, 422 (1961).Google Scholar
3. Inoue, A., Kimura, H. M., Sasamori, K. and Masumoto, T., Materials Science and Engineering A, 217–218, 401 (1996).Google Scholar
4. Kawamura, Y., Shibata, T., Inoue, A. and Matumoto, T., Scripta Metall. Mater. 37, 431 (1997).Google Scholar
5. Chen, H. S., Turnbull, D., Acta Metallurgica. 17, 1021 (1969).Google Scholar
6. Hata, S., Sato, K., Shimokohbe, A., Proc. of SPIE Device and Process Technologies for MEMS and Microelectronics, (Queensland, Australia, 1999) 3892, 97.Google Scholar
7. Fukushige, T., Yokoyama, Y., Hata, S., Masu, K. and Shimokohbe, A., Microelectronic Engineering 67–68, 582 (2003).Google Scholar
8. Jeong, H. W., Hata, S. and Shimokohbe, A., J. MEMS. 12, No.1 42 (2003).Google Scholar
9. Liu, Y., Hata, S., Wada, K. and Shimokohbe, A., Jpn. J. Appl. Phys. 40 5382 (2001).Google Scholar
10. Sakurai, J., Hata, S. and Shimokohbe, A., Proc. of SPIE, Micro- and Nanotechnology: Materials Process, Packaging and Systems II (Sydney, Australia, 2004) 5650 260.Google Scholar