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Colloidal quantum dot active layer electroluminescence in a solid GaN matrix

Published online by Cambridge University Press:  01 February 2011

Jennifer Pagan ,
Edward Stokes ,
Kinnari Patel ,
Casey Burkhart  and
Mike Ahrens
Jennifer Pagan
Affiliation:
[email protected], Dot Metrics Technologies, 1670 Sanridge Wind Lane, Charlotte, NC, 28262, United States, 704-905-6635
Edward Stokes
Affiliation:
Dot Metrics Technologies, 1670 Sanridge Wind Lane, Charlotte, NC, 28262, United States, 704-905-6635
Kinnari Patel
Affiliation:
Dot Metrics Technologies, 1670 Sanridge Wind Lane, Charlotte, NC, 28262, United States, 704-905-6635
Casey Burkhart
Affiliation:
Dot Metrics Technologies, 1670 Sanridge Wind Lane, Charlotte, NC, 28262, United States, 704-905-6635
Mike Ahrens
Affiliation:
Dot Metrics Technologies, 1670 Sanridge Wind Lane, Charlotte, NC, 28262, United States, 704-905-6635
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Abstract

In this paper the preliminary results of incorporating a novel active layer into a GaN light emitting diode (LED) are discussed. Integration of colloidal CdSe quantum dots into a GaN LED active layer is demonstrated. The conductivity of the overgrowth was examined by circular transmission line method (CTLM). Effects on surface roughness due to the active layer incorporation are examined using atomic force microscopy (AFM). LED test devices were fabricated and electroluminescence was demonstrated, the devices exhibit higher turn-on voltages than would be expected for a CdSe active layer.

Keywords

nitridemolecular beam epitaxy (MBE)semiconducting
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 891: Symposium EE – Progress in Semiconductor Materials V – Novel Materials and Electronics and Optoelectronic Applications , 2005 , 0891-EE03-06
Copyright
Copyright © Materials Research Society 2006

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References

REFERENCES

1. Arakawa, Y., and Sakaki, H., “Multidimensional quantum well laser and temperature dependence of its threshold current,” Appl. Phys. Lett., vol.40, no.11, pp.939–941, June 1982.Google Scholar
2. Asada, M., Miyamoto, Y., and Suematsu, Y., “Gain and the threshold of three-dimensional quantum box lasers,” IEEE Quantum Elect. J., vol.QE-22, no. 9, pp.1915–1921, Sept. 1986.Google Scholar
3. Alivisatos, A. P., “Semiconductor clusters, nanocrystals, and quantum dots,” Science, vol. 271, no. 5251, pp.933–937, Feb. 1996.10.1126/science.271.5251.933Google Scholar
4. Mueller, A., Petruska, M. A., Acherman, M., Werder, D., Akhadov, E.A., Koleske, D., Hoffbauer, M., Klimov, V., “Multicolor light-emitting diodes based on semiconductor nanocrystals encapsulated in GaN charge injection layers,” Nano Letters, vol. 5, no. 6, pp. 1039–1044, March 2005.Google Scholar
5. Haus, E., Smorchkova, I.P., Heying, B., Fini, P., Poblenz, C., Mates, T., Mishra, U.K., Speck, J.S., “The role of growth conditions on the p-doping of GaN by plasma-assisted molecular beam epitaxy,” J. of Crystal Growth, vol. 246, pp. 55–63, 2002.Google Scholar
6. Chen, N.C., Tseng, C.Y., Chiu, A.P., Shih, C.F., Chang, P.H., “Application of modified transmission line model to measure p-type GaN contact,” Appl. Physics Letters, vol. 85, no. 25, pp.6086–6088, Dec. 2004.10.1063/1.1835993Google Scholar
7. Bhattacharyya, A., Li, W., Cabalu, J., Moustakas, T.D., Smith, D. J., Hervig, R. L., “Efficient p-type doping of GaN films by plasma-assisted molecular beam epitaxy,” Appl. Physics Letters, vol. 85, no. 21, pp.4956–4958, Nov. 2004.Google Scholar
8. Ahrens, M.T., Stokes, E.B., Davydov, A., Schenck, P., Motayed, A., Harris, T.R., Morton, S.T., “Combinatorial study of nickel-gold p-contacts for blue indium gallium nitride light-emitting diodes,” ECS Transactions, vol. 1, no. 2 pp169–180, 2006.Google Scholar
9. Batoni, P., Patel, K., Burkhart, C.C., Shah, T.K., Iyengar, V., Ahrens, M.T., Morton, S.T., Martin, B.A., Bobbio, S.M., Stokes, E.B., “Very low pressure magnetron reactive ion etching of GaN using dichlorofluoromethane (halocarbon 12),” ECS Transactions, vol.1, no.2 pp202–207, 2006.Google Scholar
10. Schubert, E.F., Light-Emitting Diodes, (Cambridge University Press 2003) pp.56–58.Google Scholar
11. Mueller, A., Petruska, M. A., Acherman, M., Werder, D., Akhadov, E.A., Koleske, D., Hoffbauer, M., Klimov, V., “Multicolor light-emitting diodes based on semiconductor nanocrystals encapsulated in GaN charge injection layers,” Nano Letters, vol. 5, no. 6, pp. 1039–1044, March 2005.Google Scholar
12. Lee, C.-R., Seol, K. -W., Yeon, J.-M., Choi, D. -K., Ahn, H. -K., “The effect of p-GaN:Mg layers on the turn-on voltage of p-n junction LED,” J. of Crystal Growth, vol. 222 pp.459464, 2001.Google Scholar