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Cold Cathode Electron Beam Recrystallization of Soi Films

Published online by Cambridge University Press:  28 February 2011

L. R. Thompson ,
J. A. Knapp ,
C. A. Moore  and
G. J. Collins
L. R. Thompson
Affiliation:
Colorado State University, Fort Collins, CO 80523
J. A. Knapp
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185–800
C. A. Moore
Affiliation:
Applied Electron Corp., Albuquerque, NM 87113
G. J. Collins
Affiliation:
Colorado State University, Fort Collins, CO 80523
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Abstract

A cold cathode line source electron beam system for forming SOI films by zone melt recrystallization is described. Possible advantages gained from using a cold cathode electron beam include the controllability of the beam profile and power level, as well as straight-forward scaling to recrystallization of 6 or 8 inch wafers. A computer-based melt width control procedure incorporating feedback to the line intensity from optical observation of the molten zone is also described. This technique allows direct control and adjustment of the melt zone over widths typically from 1 to 3 mm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 107: Symposium H – Silicon-on-Insulator and Buried Metals in Semiconductors , 1987 , 195
Copyright
Copyright © Materials Research Society 1988

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References

1 Knapp, J. and Picraux, S.T., J. Cryst. Growth 63, 445 (1983).CrossRefGoogle Scholar
2 Saitoh, S., Higuchi, K., and Okabayashi, H., Proc. 14th Conf. Solid State Devices, Tokyo,(1982); Jpn. J. Appl. Phys. 22, 197 (1982).Google Scholar
3 Dutartre, D., Haond, M., and Bensahel, D., J. Appl. Phys. 59, 632 (1986).Google Scholar
4 Fan, J.C.C. and Zeiger, H.J., Appl. Phys. Lett. 22, 225, (1975).Google Scholar
5 Chen, C.K., Pfeiffer, L., West, K.W., Geis, M.W., Darak, S., Archaibar, G., Mountain, R.W., and Tsaur, B-Y., in Semiconductor-on-Insulator and Thin Film Technology, edited by Chiang, A., Geis, M.W., and Pfeiffer, L., (Mater. Res. Soc. Proc. Boston MA 53, 1985 pp. 55–59).Google Scholar
6 Pfeiffer, L., Gelman, A.E., Jackson, K.A., West, K.W. and Batsone, J.L., Appl. Phys. Lett. 51, 1257 (1987).Google Scholar
7 Im, J.S., Tomita, H., and Thompson, C.V., Appl. Phys. Lett. 51, 686 (1987).Google Scholar
8 Hawkins, W.G., Biegelsen, D.K., Appl. Phys. Lett. 42, 358 (1983).Google Scholar
9 Moore, C., Meyer, J., Fukimoto, J., Szluk, N., Thompson, L., Knapp, J., Collins, G., and Berkman, S., in these proceedings.Google Scholar
10 Knapp, J., Thompson, L., and Doyle, B., (to be published).Google Scholar