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Co-Implantation and the Role of Implant Damage in the Thermal Stability of Implanted Helium in Indium Phosphide

Published online by Cambridge University Press:  17 March 2011

Todd W. Simpson  and
Ian V. Mitchell
Todd W. Simpson
Affiliation:
Department of Physics & Astronomy, University of Western Ontario, London, Ontario, N6A3K7, Canada
Ian V. Mitchell
Affiliation:
Department of Physics & Astronomy, University of Western Ontario, London, Ontario, N6A3K7, Canada
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Abstract

The thermal stability of 3He implanted into single crystal indium phosphide has been studied. Helium diffuses in the 200°C-300°C temperature range unless stabilized by bubbles which trap helium up to the 400°C-500°C temperature range. The efficiency of bubble formation, as measured by the fraction of implanted helium retained to 400°C is increased by: 1) increasing the helium fluence, 2) increasing the temperature ramp rate, 3) co-implantation with a second ion species, or 4) implanting at elevated temperature. The mechanism by which these processes enhance bubble formation can be understood in terms of a model where the nucleation of bubbles occurs at elevated temperature in the presence of both lattice defects and helium atoms.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 647: Symposium O – Ion Beam Synthesis & Processing of Advanced Materials , 2000 , O6.4
Copyright
Copyright © Materials Research Society 2001

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