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Cl2-Based ECR Etching of InGaP, AlInP and AIGaP

Published online by Cambridge University Press:  10 February 2011

J. Hong ,
J. W. Lee ,
S. J. Pearton ,
C. Santana ,
C. R. Abernathy ,
W. S. Hobson  and
F. Ren
J. Hong
Affiliation:
University of Florida, Gainesville FL 32611
J. W. Lee
Affiliation:
University of Florida, Gainesville FL 32611
S. J. Pearton
Affiliation:
University of Florida, Gainesville FL 32611
C. Santana
Affiliation:
University of Florida, Gainesville FL 32611
C. R. Abernathy
Affiliation:
University of Florida, Gainesville FL 32611
W. S. Hobson
Affiliation:
Lucent Technologies Bell Laboratories, Murray Hill NJ 07974.
F. Ren
Affiliation:
Lucent Technologies Bell Laboratories, Murray Hill NJ 07974.
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Abstract

High microwave power (1000W) Electron Cyclotron Resonance (ECR) Cl2/Ar plasma produce etch rates for In0.5Ga0.5P, Al0.5In0.5P and Al0.5Ga0.5P of ˜1um/min. at low pressure (1.5mTorr), moderate rf power levels (150W) and room temperature. Addition of Cl2 into Ar makes much smoother etched surface morphology as well as increasing the etch rate. All parameters, including microwave power, chamber pressure and rf power increase the etch rate of these alloys. Especially, there is at least a minimum rf power in order to get much higher etch rate with increasing microwave power. AlGaP in Cl2/Ar discharges has lower etch rates than InGaP or AlInP, which is similar to the results based on CH4/H2/Ar plasma chemistries. The Cl2/Ar chemistry enables smooth, high-rate etching without the need for polymer addition and thus simplifies the processing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 421: Symposium D – Compound Semiconductor Electronics and Photonics , 1996 , 303
Copyright
Copyright © Materials Research Society 1996

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