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Chemistry of SiO2 Plasma Deposition

Published online by Cambridge University Press:  25 February 2011

Donald L. Smith ,
Andrew S. Alimonda  and
Tzu-Chin Chuang
Donald L. Smith
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
Andrew S. Alimonda
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
Tzu-Chin Chuang
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
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Abstract

The chemistry of SiO2 deposition from N20-SiH4 plasma was studied by line-ofsight mass spectrometry coupled with film analysis. If rf power and N2O flow are sufficient, more than enough O atoms are available to convert all of the SiH4 to SiO2, and good electrical characteristics (IV and breakdown) are then obtained with or without He dilution. Gas-phase SimHn(OH)p species make a minor contribution to the deposition and may be the source of the OH in the film. Both [OH] and electron trapping are much larger than for thermal oxide, with or without He dilution.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 204: Symposium E – Chemical Perspectives of Microelectronic Materials II , 1990 , 475
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

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