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Chemistry at the Dirac Point of Graphene: Diels-Alder Approach to Reversible Band Gap Engineering and High Mobility Graphene Devices

Published online by Cambridge University Press:  22 May 2014

Santanu Sarkar
Santanu Sarkar*
Affiliation:
Center for Nanoscale Science and Engineering, Departments of Chemistry, University of California, Riverside, California, CA-92521, USA.
*
*E-mail: [email protected]; [email protected]
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Abstract

The Diels-Alder (DA) pericyclic chemistry is one of the most powerful reactions in synthetic chemistry. We have recently shown that the unique zero-band-gap electronic structure of graphene at the Dirac point facilitates the band-gap-dependent DA reaction of graphene, although graphene is the thermochemical reference for carbon. We have shown that in the DA reactions, graphene can function either as a diene or a dienophile (dual nature). Such DA functionalization of graphene when applied to graphene-FET devices allows balanced functionalization (creation of a pair of new sp3 centers or divacancies) at both A and B graphene sublattices, allowing the fabrication of high mobility DA-functionalized single-layer graphene devices (DA-SLG) with acceptable on/off ratio. The chemistry is thermally reversible via retro-DA chemistry, thus allowing reversible engineering of graphene devices.

Keywords

bondingchemical reactionfilm
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1658: Symposium RR – Large-Area Graphene and Other 2D-Layered Materials—Synthesis, Properties and Applications , 2014 , mrsf13-1658-rr13-01
Copyright
Copyright © Materials Research Society 2014 

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Footnotes

Present address: Intel Corporation, Ronler Acres Campus, Hillsboro, Oregon, OR-97124, USA.

References

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