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Chemical Vapor Deposition of Ti-Si-N Films with Alternating Source Supply

Published online by Cambridge University Press:  10 February 2011

Jae-Sik Min ,
Hyung-Sang Park ,
Wonyong Koh  and
Sang-Won Kang
Jae-Sik Min
Affiliation:
Dept of Materials Science and Engineering, Korea Advanced Institute of Science and Technology. Taejon.SOUTH KOREA
Hyung-Sang Park
Affiliation:
Dept of Materials Science and Engineering, Korea Advanced Institute of Science and Technology. Taejon.SOUTH KOREA
Wonyong Koh
Affiliation:
Genitech. IncTaejonj.SOUTH KOREA
Sang-Won Kang
Affiliation:
Dept of Materials Science and Engineering, Korea Advanced Institute of Science and Technology. Taejon.SOUTH KOREA
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Abstract

Titanium-silicon-nitride films were grown by atomic layer deposition using an alternating supply of tetrakis(dimethylamido)titanium (TDMAT), silane. and ammonia, at substrate temperature of 180°C. The supply of a reactant was followed by a purge with inert gas before introducing another reactant onto the substrate in order to prevent gas-phase reactions. In one set of experiments the reactants were supplied separately in the sequence of TDMAT. silane. and ammonia. The Si content of the films remained constant at 18 at.%. and the film growth rate varied little from 0.24 nm per reactant-supply-cycle, even though silane partial pressure varied from 0.002 to 0.1 torr. In the other set of experiments silane and ammonia were simultaneously supplied in the sequence of TDMAT and silane/ammonia. The Si content varied from 3 to 23 at.% as the silane-to-ammonia ratio varied from 0.01 to 10. Atomic layer deposition of Ti-Si-N films allows the precise control of Si content as well as film thickness.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 564: Symposium N – Advanced Interconnects and Contacts , 1999 , 207
Copyright
Copyright © Materials Research Society 1999

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