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Chemical Routes to Ultra Thin Films for Copper Barriers and Liners

Published online by Cambridge University Press:  01 February 2011

John Ekerdt ,
Jinhong Shin ,
Wyatt Winkenwerder ,
Hyun-Woo Kim ,
Kelly Thom ,
Gyeong S Hwang ,
Kyriacos Agapiou  and
Richard A Jones
John Ekerdt
Affiliation:
[email protected], University of Texas at Austin, Chemical Engineering, 1 University Station, C0400, University of Texas at Austin, Austin, TX, 78750, United States, 512-471-4689, 512-471-7060
Jinhong Shin
Affiliation:
[email protected], University of Texas at Austin, Chemical Engineering, 1 University Station, C0400, University of Texas at Austin, Austin, TX, 78750, United States
Wyatt Winkenwerder
Affiliation:
[email protected], University of Texas at Austin, Chemical Engineering, 1 University Station, C0400, University of Texas at Austin, Austin, TX, 78750, United States
Hyun-Woo Kim
Affiliation:
[email protected], University of Texas at Austin, Chemical Engineering, 1 University Station, C0400, University of Texas at Austin, Austin, TX, 78750, United States
Kelly Thom
Affiliation:
[email protected], University of Texas at Austin, Chemical Engineering, 1 University Station, C0400, University of Texas at Austin, Austin, TX, 78750, United States
Gyeong S Hwang
Affiliation:
[email protected], University of Texas at Austin, Chemical Engineering, 1 University Station, C0400, University of Texas at Austin, Austin, TX, 78750, United States
Kyriacos Agapiou
Affiliation:
[email protected], University of Texas at Austin, Chemistry and Biochemistry, 1 University Station, A5300, University of Texas at Austin, Austin, TX, 78750, United States
Richard A Jones
Affiliation:
[email protected], University of Texas at Austin, Chemistry and Biochemistry, 1 University Station, A5300, University of Texas at Austin, Austin, TX, 78750, United States
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Abstract

Triruthenium dodecarbonyl and trimethylphosphine or triphenylphosphine, and cis-ruthenium(II)dihydridotetrakis-(trimethylphophine) were used in flowing hydrogen or argon at 575 K to explore the effect of changing the percentage of P on the amorphous character of the films and on the electrical properties of the films. First-principles density-functional calculations are presented that reveal the interaction of Ru with P, and that predict the amorphous structure should be most stable above 20 at.% P and 10 at.% B. The films contained a carbon impurity that depended on the delivery gas and the alkylphoshphine source; film resistivity was highly dependent on the carbon impurity level. The microstructure changed with the percentage P; amorphous films formed provided the percentage of P exceeded 15 at.%. Film resistivity was most sensitive to the carbon impurity and also changed with microstructure. A 15 nm thick, amorphous film containing ∼15 at.% P had a resistivity of 210 μohm-cm.

Keywords

amorphouschemical vapor deposition (CVD) (deposition)Ru
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 990: Symposium B – Materials, Processes, Integration and Reliability in Advanced Interconnects for Micro- and Nanoelectronics , 2007 , 0990-B09-01
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

1 Shin, J-H., Waheed, A., Winkenwerder, W. A., Kim, H-W., Agapiou, K., Jones, R. A., Hwang, G. S., Ekerdt, J. G., Thin Solid Films 515, 5289 (2007).Google Scholar
2 Shin, J-H., Kim, H-W., Hwang, G. S., Ekerdt, J. G., Surface Coating and Technol. (in press) (2007).Google Scholar