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Chemical Fluid Deposition of Hf-Zr-O-based Thin Films using Supercritical Carbon Dioxide Fluid

Published online by Cambridge University Press:  11 February 2015

Marina Shiokawa ,
Katsushi Izaki ,
Hiroshi Funakubo  and
Hiroshi Uchida
Marina Shiokawa
Affiliation:
Department of Materials and Life Sciences, Sophia University, Tokyo, 102-8554, Japan
Katsushi Izaki
Affiliation:
Department of Materials and Life Sciences, Sophia University, Tokyo, 102-8554, Japan
Hiroshi Funakubo
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama, 226-8502, Japan
Hiroshi Uchida
Affiliation:
Department of Materials and Life Sciences, Sophia University, Tokyo, 102-8554, Japan
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Abstract

We propose some chemical processing procedures for fabricating thin films in Hf-Zr-O system by a unique film deposition technique using supercritical carbon dioxide fluid (scCO2), i.e., supercritical fluid deposition (SCFD), which would be an prospective approach for fabricating metal-oxide films for integrated circuits because of its unique characteristics; e.g., extraction ability, transportation capability, and reaction equilibrium etc., are quite favorable for the film deposition from metal-complex precursors.

The SCFD was accomplished in a closed batch-type reaction apparatus, consisting of two steps; (a) material deposition and (b) subsequent post-treatment under scCO2 atmosphere. Thin films of amorphous Hf-Zr-O were deposited on platinized silicon [(111)Pt/TiO2/(100)Si] substrates by SCFD using metal-complex precursors M[OCH(CH3)]2(C9H11O2)2 (M = Hf or Zr) at reaction temperature of 100 – 300 °C, significantly lower than those for MOCVD. These films possessed dielectric permittivity’s of approximately 20 – 25, comparable to those from conventional processes, although they still included residue of organic species that prompt the dielectric degradation under lower-frequency bias application.

Keywords

thin filmdielectric propertieschemical vapor deposition (CVD) (deposition)
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1729: Symposium M – Materials and Technology for Nonvolatile Memories , 2015 , pp. 99 - 104
Copyright
Copyright © Materials Research Society 2015 

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References

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