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Chemical Beam Epitaxy (CBE) and Laser-Enhanced CBE of GaAs Using Tris-Dimethylaminoarsenic

Published online by Cambridge University Press:  22 February 2011

H. K. Dong ,
N. Y. Li ,
C. W. Tu ,
M. Geva  and
W. C. Mitchel
H. K. Dong
Affiliation:
Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla, California 92093-0407
N. Y. Li
Affiliation:
Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla, California 92093-0407
C. W. Tu
Affiliation:
Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla, California 92093-0407
M. Geva
Affiliation:
AT&T Bell Laboratories, Breinigsville, Pennsylvania 18031-9359
W. C. Mitchel
Affiliation:
Air Force Wright Laboratory, Wright-Patterson AFB, Ohio 45433-6543
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Abstract

In this paper, we report chemical beam epitaxy (CBE) of GaAs, and for the first time, Arion laser-assisted CBE using triethylgallium (TEGa) and tris-dimethylaminoarsenic (TDMAAs), a safer alternative to arsine. Samples grown at substrate temperatures above 490° C show n-type conduction, while those grown at lower temperatures show p-type conduction. An unintentional doping concentration of n∼lx1016 cm-3 with an electron mobility of 5200 cm2/V.s at 300 K and 16000 cm2/V.s at 77 K have been achieved. These are the best results reported for GaAs grown with TDMAAs. Laser-assisted CBE of GaAs is studied in the substrate temperature range of 240-550°C. There are two different substrate-temperature regions for laser-enhanced growth, 265 to 340°C and 340 to 440°C, which are believed to be caused by different TEGa decomposition mechanisms. The laser-assisted growth with TDMAAs, compared to AS4 or AsH3, shows a wider range of growth enhancement at low substrate temperatures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 340: Symposium E – Compound Semiconductor Epitaxy , 1994 , 173
Copyright
Copyright © Materials Research Society 1994

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References

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