Hostname: page-component-586b7cd67f-t7fkt Total loading time: 0 Render date: 2024-11-28T09:47:38.097Z Has data issue: false hasContentIssue false
  • English
  • Français

Charge motion and trapping in molecularly doped hole transporters

Published online by Cambridge University Press:  01 February 2011

H.H. Fong ,
K.C. Lun  and
S.K. So
H.H. Fong
Affiliation:
Department of Physics, Hong Kong Baptist University, Kowloon Tong, Hong Kong, China.
K.C. Lun
Affiliation:
Department of Physics, Hong Kong Baptist University, Kowloon Tong, Hong Kong, China.
S.K. So
Affiliation:
Department of Physics, Hong Kong Baptist University, Kowloon Tong, Hong Kong, China.
Get access

Abstract

The charge transporting properties of N, N'-dipheny l-N, N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine (TPD), TPD doped with 5,6,11,12- tetraphenylnaphthacene (rubrene), and TPD doped with 4-(dicyanomethylene)-2-methyl-6-(pdimethylaminostyryle) 4H-pyran (DCM1) were examined by time-of-flight (TOF) technique between 180-300K. The dependence of the mobility on electric field and temperature for undoped and doped TPD was investigated. Reductions in hole mobility shows that both dopants act as hole traps in TPD. Computational results of TPD also account for the effective hole conduction in pristine TPD film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 725: Symposium P – Organic and Polymeric Materials and Devices-Optical, Electrical, and Optoelectronic Properties , 2002 , P8.1
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Tang, C.W. VanSlyke, S.A. Chen, C.H. J. Appl. Phys. 65, 3610 (1989)Google Scholar
2. Kepler, R.G. Beeson, P.M. Jacobs, S.J. Anderson, R.A. Sinclair, M.B. Valencia, V.S. Cahill, P.A. Appl. Phys. Lett. 66, 3618 (1995)Google Scholar
3. Borsenberger, P.M. Magin, E.H. Shi, J. Physica B 217, 212 (1996)Google Scholar
4. Forsythe, E.W. Abkowitz, M.A. Gao, Yongli, J. Phys. Chem. B 104, 3948 (2000)Google Scholar
5. Aziz, H. Popovic, Z.D. Hu, N.X. Hor, A.M. Xu, G. Science 283, 1900 (1999)Google Scholar
6. So, S.K. Choi, W.K. Cheng, C.H. Leung, L.M. Kwok, C.F. Appl. Phys. A 68, 447 (1999).Google Scholar
7. Fong, H.H. Lun, K.C. So, S.K. Chem. Phys. Lett. 353, 407 (2002)Google Scholar
8. Stolka, M. Yanus, J.F. Pai, D.M. J. Phys. Chem. 88, 4707 (1984)Google Scholar
9. Heun, S. Borsenberger, P.M. Chem. Phys. 200, 245 (1995)Google Scholar
10. Bässler, H., Phys. Stat. Sol. B 175, 15 (1993)Google Scholar
11. Murata, H. Merritt, C.D. Kafafi, Z. IEEE J. Quantum Electron. 4, 119 (1998)Google Scholar
12. Hamada, Y. Matsusue, N. Kanno, H. Fujii, H. Jpn. J. Appl. Phys. 40, L753 (2001).Google Scholar
13. Lam, J. Gorjanc, T.C. Tao, Y. D'loria, M., J. Vac. Sci. Technol. A 18, 593 (2000)Google Scholar