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Charge Injection into Bottom-Contact Pentacene Thin-Film Transistors

Published online by Cambridge University Press:  01 February 2011

Yi Hong ,
Feng Yan ,
Piero Migliorato ,
S H Han  and
Jin Jang
Yi Hong
Affiliation:
[email protected], Electrical Engineering Division, Engineering Department, University of Cambridge, 9, JJ Thomson Avenue, Cambridge, N/A, CB3 0FA, United Kingdom
Feng Yan
Affiliation:
[email protected], University of Cambridge, Engineering Department, Cambridge, N/A, CB3 0FA, United Kingdom
Piero Migliorato
Affiliation:
[email protected], University of Cambridge, Engineering Department, Cambridge, N/A, CB3 0FA, United Kingdom
S H Han
Affiliation:
[email protected], Kyung Hee University, Advanced Display Research Center, Seoul, N/A, 130-701, Korea, Republic of
Jin Jang
Affiliation:
[email protected], Kyung Hee University, Advanced Display Research Center, Seoul, N/A, 130-701, Korea, Republic of
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Abstract

We investigate the contact of bottom-contact pentacene-based thin-film transistors, with Au source/drain electrode. By separating the voltage drop at the contact from the source-drain voltage, the current-voltage characteristic of the injection contact is obtained. The contact characteristics are in a good agreement with a model of carrier injection from a metal electrode into a disordered hopping system.

Keywords

organicdevicesAu
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 937: Symposium M – Conjugated Organic Materials – Synthesis, Structure, Device, and Applications , 2006 , 0937-M07-29
Copyright
Copyright © Materials Research Society 2006

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References

1 Nichols, J. A., Gundlach, D. J., and Jackson, T. N., Appl. Phys. Lett. 83, 2366 (2003).Google Scholar
2 Puntambekar, K. P., Pesavento, P. V., and Frisbie, C. D., Appl. Phys. Lett. 83, 5539 (2003).Google Scholar
3 Burgi, L., Richards, T. J., Friend, R. H., and Sirringhaus, H., J. Appl. Phys. 94, 6129 (2003).Google Scholar
4 Street, R. A. and Salleo, A., Appl. Phys. Lett. 81, 2887 (2002).Google Scholar
5 Necliudov, P. V., Shur, M. S., Gundlach, D. J., and Jackson, T. N., Solid-State Electron. 47, 259 (2003).Google Scholar
6 Pesavento, P. V., Chesterfield, R. J., Newman, C. R., and Frisbie, C. D., J. Appl. Phys. 96, 7312 (2004).Google Scholar
7 Yagi, I., Tsukagoshi, K., and Aoyagi, Y., Appl. Phys. Lett. 84, 813 (2004).Google Scholar
8 Li, T., Ruden, P. P., Campbell, I. H., and Smith, D. L., J. Appl. Phys. 93, 4017 (2003).Google Scholar
9 Kymissis, I., Dimitrakopoulos, C. D., and Purushothaman, S., IEEE Trans. Electron. Dev. 48, 1060 (2001).Google Scholar
10 Amy, F., Chan, C. and Kahn, A., Org. Electron. 6, 85 (2005).Google Scholar
11 Emtage, P. R. and O'Dwyer, J. J., Phys. Rev. Lett. 16, 356 (1966).Google Scholar
12 Scott, J. C. and Malliaras, G. G., Chem. Phys. Lett. 299, 115 (1999).Google Scholar
13 Arkhipov, V. I., Emelianova, E. V., Tak, Y. H., and Bassler, H., J. Appl. Phys. 84, 848 (1998).Google Scholar
14 Arkhipov, V. I., Wolf, U., and Bassler, H., Phys. Rev. B 59, 7514 (1999).Google Scholar
15 Reynaert, J., Arkhipov, V. I., Borghs, G., and Heremans, P., Appl. Phys. Lett. 85, 603 (2004).Google Scholar
16 Hamadani, B. H. and Natelson, D., J. Appl. Phys. 97, 64508 (2005).Google Scholar
17 Choi, H. Y., Kim, S. H., and Jang, J., Adv. Mater. 16, 732 (2004).Google Scholar
18 Pyo, K. S., Song, C. K., Thin Solid Films 485, 230–234 (2005).Google Scholar