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Charge Carrier Mobility Measurements in Tetracene Single Crystals

Published online by Cambridge University Press:  01 February 2011

Jens Pflauma ,
Jens Niemax  and
Ashutosh Kumar Tripathi
Jens Pflauma
Affiliation:
3. Physics Department, University of Stuttgart, 70550 Stuttgart, Germany
Jens Niemax
Affiliation:
3. Physics Department, University of Stuttgart, 70550 Stuttgart, Germany
Ashutosh Kumar Tripathi
Affiliation:
3. Physics Department, University of Stuttgart, 70550 Stuttgart, Germany
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Abstract

We present data on the transport of charge carriers in the organic semiconductor tetracene. Comparative measurements by time-of-flight (TOF) spectroscopy and measurements in field-effect transistor (FET) geometry reveal hole mobilities of about 1 cm2/Vs. Whereas for FETs only hole transport can be detected, from TOF a strong dispersive transport for negative charge carriers is observed. This observation is mainly caused by deep-level trapping of electrons. By fitting the temperature dependent hole mobility to a model of multiple-trapping and release of charge carriers the trap energy and the relative trap density can be adjusted to 130 meV and 5·10-3, respectively. Comparative chemical and structural analysis of inhomogeneities show that the traps affecting the transport are mainly caused by chemical defects rather than by structural imperfections.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 871: Symposium I – Organic Thin-Film Electronics , 2005 , I7.2
Copyright
Copyright © Materials Research Society 2005

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References

[1] Boer, R.W.I. de, Gershenson, M.E., Morpurgo, A.F., Podzorov, V., phys. stat. sol. 201, 1302 (2004).Google Scholar
[2] Karl, N., in Organic Electronic Materials, edited by Farchioni, F. and Grosso, G., (Springer Verlag, Berlin, 2001), pp.283.Google Scholar
[3] Probst, K.-H. and Karl, N., phys. stat. sol. a 27, 499 (1975).Google Scholar
[4] Kelley, T.W. and Frisbie, C.D., J. Phys. Chem. B 105, 4538 (2001).Google Scholar
[5] Boer, R.W.I. de, Jochemsen, M., Klapwijk, T.M., Morpurgo, A.F., Niemax, J., Tripathi, A.K., Pflaum, J., J. Appl. Phys. 95, 1196 (2004).Google Scholar
[6] Niemax, J., Tripathi, A.K., Pflaum, J., Appl. Phys. Lett. 86, 122105 (2005).Google Scholar
[7] Hoesterey, D.C. and Letson, G.M., J. Phys. Chem. Solids 24, 1609 (1963).Google Scholar
[8] Northrup, J.E. and Chabinyc, M.L., Phys. Rev. B 68, 41202 (2003).Google Scholar
[9] Karl, N., in Organic Semiconductors, edited by Queisser, H.J. (Pergamon-Vieweg, Braunschweig, 1974), pp. 261.Google Scholar
[10] Mokichev, N.N. and Pakhomov, L.G., Sov. Phys. Solid State 24, 1925 (1982).Google Scholar
[11] Niemax, J. and Pflaum, J. 2005 (unpublished).Google Scholar
[12] Warta, W. and Karl, N., Phys. Rev. B 32, 1172 (1985).Google Scholar