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Characterization of Non-Polar Surfaces in HVPE Grown Gallium Nitride

Published online by Cambridge University Press:  01 February 2011

Kun-Yu Lai ,
Judith A. Grenko ,
V. D. Wheeler ,
Mark Johnson ,
E. A. Preble ,
N. Mark Williams  and
A. D. Hanser
Kun-Yu Lai
Affiliation:
[email protected], North Carolina State University, Materials Science and Engineering, Materials Science and Engineering, Raleigh, NC, 27695, United States
Judith A. Grenko
Affiliation:
[email protected], North Carolina State University, Materials Science and Engineering, Raleigh, NC, 27695, United States
V. D. Wheeler
Affiliation:
[email protected], North Carolina State University, Materials Science and Engineering, Raleigh, NC, 27695, United States
Mark Johnson
Affiliation:
[email protected], North Carolina State University, Materials Science and Engineering, Raleigh, NC, 27695, United States
E. A. Preble
Affiliation:
[email protected], Kyma Technologies, Inc., Raleigh, NC, 27617, United States
N. Mark Williams
Affiliation:
[email protected], Kyma Technologies, Inc., Raleigh, NC, 27617, United States
A. D. Hanser
Affiliation:
[email protected], Kyma Technologies, Inc., Raleigh, NC, 27617, United States
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Abstract

Non-polar surfaces of HVPE grown GaN were characterized by cathodoluminescence (CL), scanning electron microscopy (SEM), and secondary ion mass spectrometry (SIMS). Both of a- and m-plane GaN were prepared by growing thick GaN along the c-axis, and cutting in transverse orientations. The exposed non-polar surfaces were prepared by mechanical polishing (MP) and chemically mechanical polishing (CMP). Non-uniform luminescent characteristics on a- and m-plane GaN were observed in CL images, indicating a higher concentration of impurities in the area of more luminescence. CL spectra from the bulk samples revealed two peaks: 364 nm and 510 nm, related to band edge and impurity defects respectively. The detection by SIMS confirmed that oxygen was inhomogeneously incorporated during the growth of thick GaN layers. Surface qualities of a- and m-plane GaN were also investigated. The lower optical intensities from a-plane GaN at low acceleration voltages indicated more surface damages were introduced during polish. The optical intensity difference from the two samples was reduced at higher acceleration voltages. Similar CL intensities at low acceleration voltages from a- and m-plane GaN substrates prepared by CMP indicated improved surface qualities.

Keywords

III-Vluminescenceoptoelectronic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 955: Symposium I – Advances in III-V Nitride Semiconductor Materials and Devices , 2006 , 0955-I09-05
Copyright
Copyright © Materials Research Society 2007

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References

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