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Characterization of Indium Sulfide Thin Films Containing Copper

Published online by Cambridge University Press:  31 January 2011

Nicolas Barreau  and
Mickael Tessier
Nicolas Barreau
Affiliation:
[email protected], Institut des Matériaux Jean Rouxel, 2 rue de la Houssinière, BP 32229, Nantes, 44322, France
Mickael Tessier
Affiliation:
[email protected], IMN, Nantes, France
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Abstract

The crystalline, optical and electrical properties of In2S3 containing copper thin films are investigated. Increasing the amount of copper within the In2S3 crystalline matrix yields reduced bandgap value and hindered conductivity. The films investigated being synthesized at low temperature (200 °C), it is likely they have similar properties as the materials formed at the CuIn1-xGaxSe2/In2S3 interface.

Keywords

photovoltaicoptical propertieselectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1165: Symposium M – Thin-Film Compound Semiconductor Photovoltaics–2009 , 2009 , 1165-M08-21
Copyright
Copyright © Materials Research Society 2009

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