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Characterization of High-k Dielectric Films with Tunneling AFM
Published online by Cambridge University Press: 11 February 2011
Abstract
In this paper, we report the leakage current characterization of HfO2 high-k dielectric thin films by using tunneling AFM, which utilizes a conducting AFM probe to detect current passing through the sample and the probe while simultaneously acquiring a topographic image. We have studied tunneling current behavior of HfO2 films by characterizing the hot spots, which are characterized by excessive local leakage current, as well as the overall current distribution. Tunneling AFM results show sensitive dependence of tunneling current with variation of film thickness. The current distribution can be described approximately by a log-normal distribution, which is consistent with the characteristics of the thickness variation. Furthermore, the film structure and thickness were also characterized with TEM and spectroscopic ellipsometry.
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- Copyright © Materials Research Society 2003
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