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Characterization of HgCdTe Epilayers and HgTe-CdTe Superlattice Structures Grown by Molecular Beam Epitaxy

Published online by Cambridge University Press:  25 February 2011

T. H. Myers ,
R. W. Yanka ,
J. P. Karins ,
K. A. Harris ,
J. W. Cook  and
J. F. Schetzina
T. H. Myers
Affiliation:
Electronics Laboratory, General Electric Company Syracuse, New York 13221
R. W. Yanka
Affiliation:
Electronics Laboratory, General Electric Company Syracuse, New York 13221
J. P. Karins
Affiliation:
Electronics Laboratory, General Electric Company Syracuse, New York 13221
K. A. Harris
Affiliation:
North Carolina State University, Raleigh, North Carolina 27695
J. W. Cook
Affiliation:
North Carolina State University, Raleigh, North Carolina 27695
J. F. Schetzina
Affiliation:
North Carolina State University, Raleigh, North Carolina 27695
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Abstract

The results of an in-depth study of HgCdTe epilayers and HgTe-CdTe superlattice structures are summarized. In particular, both spectral and transient photoconductance measurements have been made on samples which were also characterized by x-ray diffraction, Hall, IR transmission, IR photoluminescence, and transmission electron microscopy measurements. Selected HgCdTe samples grown at General Electric during this investigation exhibit some of the best structural and electrical properties reported to date for MBE-grown HgCdTe. Sharp photoconductance spectra have been obtained for HgTe-CdTe superlattice structures grown at North Carolina State University. This study is part of an on-going collaborative effort between General Electric's Electronics Laboratory and North Carolina State University.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 90: Symposium R – Materials for Infrared Detectors and Sources , 1986 , 295
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

Harris, K.A., Hwang, S., Blanks, D.K., Cook, J.W. Jr, and Schetzina, J.F., J. Vac. Sci. Technol. A 4, 2061 (1985).CrossRefGoogle Scholar
Myers, T.H., Yanka, R.W., Green, R.W. (submitted to Applied Physics Letters).Google Scholar
3. Harris, K.A., Hwang, S., Blanks, D.K., Cook, J.W. Jr, Schetzina, J.F., Otsuka, N., Baukus, J.P., and Hunter, A.T., Appl. Phys. Lett. 48, 396 (1986).CrossRefGoogle Scholar
4. Ballingall, J.M. (private communication).Google Scholar