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Characterization of HF Treated (100) Si Surfaces by Surface Charge Analysis (SCA)

Published online by Cambridge University Press:  25 February 2011

Jon T. Fitch
Jon T. Fitch*
Affiliation:
Motorola Inc., Advanced Products Research and Development Laboratory, MD-K10, 3501 Ed Bluestein Blvd., Austin, TX 78721
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Abstract

Surface Charge Analysis (SCA), and ellipsometry have been used to study the stability over time of HF treated (100) silicon surfaces as a function of the post-HF rinse time. Using SCA, the electrical properties of the chemical terminating layer of these silicon surfaces were measured. The surfaces which remained native oxide free the longest (−10 hours) had very low Qox and Dit values on the order of 1.0 × 1011/cm2 and 5.0 × 1010 eV−lcm−2, respectively. A good correlation was found between Dit and the native oxide thickness measured by ellipsometry. This and other results are discussed in terms of the chemical bonding on the silicon surfaces.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 259: Symposium B – Chemical Surface Preparation, Passivation and Cleaning for Semiconductor Growth and Processing , 1992 , 427
Copyright
Copyright © Materials Research Society 1992

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References

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