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Characterization of Ferroelectric Property of c-axis and non-c-axis Oriented Epitaxially Grown Bismuth Layer-Structured Ferroelectric Thin Films with Different m-numbers Prepared by MOCVD

Published online by Cambridge University Press:  21 March 2011

Takayuki Watanabe ,
Tomohiro Sakai ,
Atsushi Saiki ,
Keisuke Saito ,
Toyohiko Chikyo  and
Hiroshi Funakubo
Takayuki Watanabe
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama-shi, Kanagawa 226-8502, Japan
Tomohiro Sakai
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama-shi, Kanagawa 226-8502, Japan
Atsushi Saiki
Affiliation:
Research Cooperation Section, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8550, Japan
Keisuke Saito
Affiliation:
Application Laboratory, Analytical Department, Philips Japan, Ltd., 35-1 Sagamiono 7-chome, Sagamihara-shi, Kanagawa 228-0803, Japan
Toyohiko Chikyo
Affiliation:
National Research Institute for Metals, Tsukuba Laboratory, 1-2-1 Sengen, Tsukuba-shi, Ibaraki 305-0047, Japan
Hiroshi Funakubo
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama-shi, Kanagawa 226-8502, Japan
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Abstract

Epitaxial thin films of bismuth layer-structured ferroelectrics (BLSF) with different m-numbers, i.e., Bi2VO5.5 (BVO) (m=1), SrBi2Ta2O9 (SBT) (m=2), and Bi4Ti3O12 (BIT) (m=3), were grown by metalorganic chemical vapor deposition (MOCVD). (00l)-oriented films were deposited on (100)SrTiO3. (114)-oriented BVO, (116)-oriented SBT, and (118)-oriented BIT films were deposited on (110)SrTiO3. Moreover, (102)-oriented BVO, (103)-oriented SBT, and (104)-oriented BIT films were deposited on (111)SrTiO3. On (100), (110), and (111)SrTiO3 substrates, c-axis of the deposited films was tilted about 0°, 45°, and 56°, respectively, against perpendicular to the surface of the substrates irrespective of m-number. This suggests the growth of crystallographic equivalent orientation. The distinctive surface morphology originated to the feature of the film orientation was observed. The dielectric constant and the leakage current of c-axis-oriented film was smaller than that of non-c-axis-oriented one, indicating smaller dielectric constant and leakage current along c-axis than a- or b-axes. A larger ferroelectric anisotropy was ascertained for SBT and BIT films. Furthermore, the evaluated spontaneous polarization along a- and c- axes of BIT from the data of the epitaxially grown BIT films well agreed with the reported one for the single crystal. This suggests the ferroelectric property was not strongly affected by the strain in the films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 655 , 2000 , CC1.9.1
Copyright
Copyright © Materials Research Society 2001

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