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Characterization of Cvd Diamond Films by Optical Spectroscopies

Published online by Cambridge University Press:  21 February 2011

Joel W. Ager III
Affiliation:
Center for Advanced Materials, Materials Sciences Division, Lawrence Berkeley Laboratory, Berkeley, CA 94720
Sung Han
Affiliation:
Department of Nuclear Engineering, University of California at Berkeley, Berkeley, California 94720
Ron S. Wagner
Affiliation:
Electronics Division, D429, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
Lawrence S. Pan
Affiliation:
Electronics Division, D429, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
D.R. Kania
Affiliation:
Crystallume, Menlo Park, CA 94025
Stephen M. Lane
Affiliation:
Laser Program of Lawrence Livermore National Laboratory, L-476, Livermore, California 94550
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Abstract

Raman and photoluminescence spectroscopy was used to investigate radiation damage by 5 MeV He+ ions at room temperature in prototype CVD-diamond detector material. Amorphization of the diamond is not observed at fluences up to 8×1015 cm-2. A threshold behavior is seen in the formation of the H3 vacancy-dinitrogen color center. The defect is not observed for fluences in the range 1.6×1012 to 1.6×1013 cm-2; a linear behavior increase in H3 intensity is observed over the range 1.6×1014 to 1.6×1015 cm-2. The formation mechanism of the H3 color center under He+ irradiation involves a self-annealing effect that allows vacancies to diffuse to, and complex with, nitrogen complexes.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

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References

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