Hostname: page-component-745bb68f8f-kw2vx Total loading time: 0 Render date: 2025-01-27T02:44:46.757Z Has data issue: false hasContentIssue false
  • English
  • Français

Characterization of Cu-Al alloy/SiO2 interface microstructure

Published online by Cambridge University Press:  14 March 2011

Pei-I Wang ,
S. P. Murarka ,
G.-R. Yang ,
E. Barnat ,
T.-M. Lu ,
Y.-C. Chen ,
Xiang Li  and
K. Rajan
Pei-I Wang
Affiliation:
Center for Integrated Electronics, Electronics Manufacturing and Electronic Media, Rensselaer Polytechnic Institute, Troy, NY 12180
S. P. Murarka
Affiliation:
Center for Integrated Electronics, Electronics Manufacturing and Electronic Media, Rensselaer Polytechnic Institute, Troy, NY 12180
G.-R. Yang
Affiliation:
Center for Integrated Electronics, Electronics Manufacturing and Electronic Media, Rensselaer Polytechnic Institute, Troy, NY 12180
E. Barnat
Affiliation:
Center for Integrated Electronics, Electronics Manufacturing and Electronic Media, Rensselaer Polytechnic Institute, Troy, NY 12180
T.-M. Lu
Affiliation:
Center for Integrated Electronics, Electronics Manufacturing and Electronic Media, Rensselaer Polytechnic Institute, Troy, NY 12180
Y.-C. Chen
Affiliation:
Department of Materials Science & Engineering, Rensselaer Polytechnic Institute, Troy NY 12180
Xiang Li
Affiliation:
Department of Materials Science & Engineering, Rensselaer Polytechnic Institute, Troy NY 12180
K. Rajan
Affiliation:
Department of Materials Science & Engineering, Rensselaer Polytechnic Institute, Troy NY 12180
Get access

Abstract

Cu-Al alloys have been recommended for application as the diffusion barriers/adhesion promoters for advanced copper based metallization schemes. This approach to barrier formation is to generate an ultra-thin interfacial layer through Cu alloying without significantly affecting the resistivity of Cu. In this paper the microstructure of the bilayers of Cu/Cu-5 at%Al and Cu-5 at%Al/Cu sputter deposited on SiO2 before and after thermal annealing is investigated by transmission electron microscopy (TEM). Interfacial layer is observed in both cases. The variation of the resistance of the Cu-Al alloy film is consistent with its microstructure. The x-ray diffraction (XRD) spectra of Cu-5 at%Al on SiO2 shows that the addition of Al into Cu intends to favor the Cu (111) texture. These results will be presented and discussed showing that films of Cu doped with Al appear to act as a suitable barrier and adhesion promoter between SiO2 and Cu.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 615: Symposium G – Polycrystalline Metal & Magnetic Thin Films - 2000 , 2000 , G7.5.1
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Murarka, S. P. and Hymes, S., Critical Reviews in Solid State and Materials Sciences 20, 87 (1995).10.1080/10408439508243732Google Scholar
2 McBrayer, J. D., Swanson, R. M., and Sigmon, T. W., J. Electrochem. Soc. 133, 1242 (1986).10.1149/1.2108827Google Scholar
3 Shacham-Diamand, Y., Dehia, A., Hoffstetter, D., and Oldham, W. G., J. Electrochem. Soc. 140, 2427 (1993).10.1149/1.2220837Google Scholar
4 Wang, S. Q., Raaijmakers, I., Burrow, B. J., Suthar, S., Redkar, S.. and Kim, K. B., J. Appl. Phys. 68, 5176 (1990).10.1063/1.347059Google Scholar
5 Holloway, K., Fryer, P. M., Cabral, C. Jr., Harper, J. M. E., Bailey, P. J., and, Kelleher, K. H., J. Appl. Phys. 71, 5433 (1992).10.1063/1.350566Google Scholar
6 Lee, J. Y. and Park, J. W., Jpn. J. Appl. Phys. 35, 4280 (1996).10.1143/JJAP.35.4280Google Scholar
7 Takeyama, M. and Noya, A., Jpn. J. Appl. Phys. 36, 2261 (1997).10.1143/JJAP.36.2261Google Scholar
8 Nicolet, M.-A., Applied Surface Science 91, 269 (1995).10.1016/0169-4332(95)00130-1Google Scholar
9 Kirchnar, E. J., PhD Thesis, Rensselaer Polytechnic Institute, 1996.Google Scholar
10 Ding, P. J., Wang, W., Lanford, W. A., Hymes, S., and Murarka, S. P., Appl. Phys. Lett. 65, 1778 (1994).10.1063/1.112866Google Scholar
11 Tracy, D. P. and Knorr, D. B., J. Electronic Materials 22, 611 (1993).10.1007/BF02666406Google Scholar
12 Hwang, N. M., J. Materials Science 33, 5625 (1998).10.1023/A:1004472400615Google Scholar
13 Wang, Pei-I, Yang, G.-R., Murarka, S. P., and Lu, T.-M., to be published.Google Scholar
14 Wang, Pei-I, Murarka, S. P., Yang, G.-R., and Lu, T.-M., to be published.Google Scholar