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Characterization of a-Si:H Near a-Sinx:H/a-Si:H Interface by Photoluminescence Spectra

Published online by Cambridge University Press:  28 February 2011

Tetsuzo Yoshimura ,
Kouichi Hiranaka ,
Tadahisa Yamaguchi ,
Shintaro Yanagisawa  and
Kunihiko Asama
Tetsuzo Yoshimura
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Japan
Kouichi Hiranaka
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Japan
Tadahisa Yamaguchi
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Japan
Shintaro Yanagisawa
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Japan
Kunihiko Asama
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Japan
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Abstract

The influence of the a-SiNx:H composition on the near-interface properties of the a-SiNx:H/a-Si:H layered structure was studied by photoluminescence measurements and the results were compared with a-Si TFT characteristics. It was found that the cw photoluminescence spectra of a-Si:H near the interface tend to shift to the low-energy side with an increase in nitrogen content of the a-SiNx:H layer. Time-resolved photoluminescence measurement revealed that the low-energy shift of the cw photoluminescence band is attributed to an enhancement of an additional broad band, which is caused by deep states, appearing in the low-energy side of the band arising from the transition between band tail electrons and holes. A decrease in field effect mobility in TFTs with an a-SiNx:H gate-insulator was observed when the nitrogen content of the a-SiNx:H increases, and correlated well with the low-energy shift of the cw photoluminescence band. These results suggest that the deep states in a-Si:H near the interface tend to increase with the nitrogen content of the a-SiNx:H. The origin of the states is believed to be a lattice strain induced in the a-Si:H layer.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 70: Symposium E – Materials Issues in Amorphous-Semiconductor Technology , 1986 , 373
Copyright
Copyright © Materials Research Society 1986

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References

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