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Characterization of 4H <000-1> Silicon Carbide Films Grown by Solvent-Laser Heated Floating Zone

Published online by Cambridge University Press:  13 June 2012

Andrew A. Woodworth ,
Ali Sayir ,
Philip G. Neudeck ,
Balaji Raghothamachar  and
Michael Dudley
Andrew A. Woodworth
Affiliation:
NASA Postdoctoral Program Fellow, NASA Glenn Research Center, 21000 Brookpark Road, MS 106-1, Cleveland, OH 44135, USA
Ali Sayir
Affiliation:
NASA Glenn Research Center, 21000 Brookpark Road, MS 106-1, Cleveland, OH 44135, USA
Philip G. Neudeck
Affiliation:
NASA Glenn Research Center, 21000 Brookpark Road, MS 77-1, Cleveland, OH 44135, USA
Balaji Raghothamachar
Affiliation:
Department of Materials Science & Engineering, Stony Brook University, Stony Brook, NY 11794-2275, USA
Michael Dudley
Affiliation:
Department of Materials Science & Engineering, Stony Brook University, Stony Brook, NY 11794-2275, USA
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Abstract

Commercially available bulk silicon carbide (SiC) has a high number (>2000/cm2) of screw dislocations (SD) that have been linked to degradation of high-field power device electrical performance properties. Researchers at the NASA Glenn Research Center have proposed a method to mass-produce significantly higher quality bulk SiC. In order for this bulk growth method to become reality, growth of long single crystal SiC fibers must first be achieved. Therefore, a new growth method, Solvent-Laser Heated Floating Zone (Solvent-LHFZ), has been implemented. While some of the initial Solvent-LHFZ results have recently been reported, this paper focuses on further characterization of grown crystals and their growth fronts. To this end, secondary ion mass spectroscopy (SIMS) depth profiles, cross section analysis by focused ion beam (FIB) milling and mechanical polishing, and orientation and structural characterization by X-ray transmission Laue diffraction patterns and X-ray topography were used. Results paint a picture of a chaotic growth front, with Fe incorporation dependant on C concentration.

Keywords

crystal growthcrystallographic structuresecondary ion mass spectroscopy (SIMS)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1433: Symposium H – Silicon Carbide 2012—Materials, Processing and Devices , 2012 , mrss12-1433-h04-14
Copyright
Copyright © Materials Research Society 2012

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