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Characterization and Metrology of Low Pressure Chemical Vapor Deposited (LPCVD) Polysilicon

Published online by Cambridge University Press:  15 February 2011

Leo Asinovsky ,
Michael Schroth ,
Fei Shen  and
John Sweeney III
Leo Asinovsky
Affiliation:
Rudolph Technologies Inc., Flanders, NJ 07836, USA
Michael Schroth
Affiliation:
Bruce Technologies Int'l, North Billerica, MA 01862, USA
Fei Shen
Affiliation:
Rudolph Technologies Inc., Flanders, NJ 07836, USA
John Sweeney III
Affiliation:
Bruce Technologies Int'l, North Billerica, MA 01862, USA
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Abstract

Polycrystalline silicon (polySi) is widely used in the semiconductor industry as a gate electrode, interconnect material and for various other applications. Small variations in deposition conditions can significantly affect this material's properties, cause errors in metrology control of the film thicknesses and, ultimately, in device performance. In this work polySi was LPCVD deposited in a vertical reactor with multiple gas inlets and a flat temperature distribution. Deposition conditions were controllably changed to create a matrix of wafers. Characterization is done using production dual wavelength, multiple-angle-of-incidence and research grade spectroscopie ellipsometers. PolySi thickness and composition uniformity are analyzed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 1013
Copyright
Copyright © Materials Research Society 1997

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References

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