Hostname: page-component-669899f699-g7b4s Total loading time: 0 Render date: 2025-05-03T00:28:29.199Z Has data issue: false hasContentIssue false
  • English
  • Français

Characterization and Application of Laser Induced Seeded-Lateral Epitaxtal Si Layers on SiO2

Published online by Cambridge University Press:  15 February 2011

M. Miyao ,
M. Ohkura ,
T. Warabisako  and
T. Tokuyama
M. Miyao
Affiliation:
Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo 185, Japan
M. Ohkura
Affiliation:
Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo 185, Japan
T. Warabisako
Affiliation:
Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo 185, Japan
T. Tokuyama
Affiliation:
Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo 185, Japan
Get access

Abstract

Electrical and crystal properties of seeded lateral epitaxial Si are evaluated as a function of distance from seeding area with the aid of a micro-probe RHEED and MOSFET fabrication. the results indicate that the quality of a grown layer is as good as that of bulk Si Crystal for most of the epitaxial layer. However, at the SiO2 edge, electrial properties are somewhat poor due to the existence of dislocation and residual stress.Element devices useful for SO structures are fabricated. Electrical properties of MOSPET's with double active areas indicate that surface and bottomregions of the epitaxial layer are all of device worthy quality.Insulated control gate bipolar type transistors are proposed and some preliminary results are shown.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982 , 499
Copyright
Copyright © Materials Research Society 1983

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1)Laser and Electron Beam Processing of Materials edts: White, C.W. and Peercy, P.S. (Academic Press, New York 1980).Google Scholar
2)Laser and Electron Beam-Solid Interactions and Material Processing edts: Gibbons, J.F., Hess, L.D. and Sigmon, T.W. (North-Holland, New York 1981).Google Scholar
3)Laser and Electron-Beam Interactions with Solids edts: Appleton, B.R. and Celler, G.K. (North-Holland, New York 1982)Google Scholar
4)Tamura, M., Tamura, H. and Tokuyama, T.: Jpn.J.Appl.Phys. 19 L23 (1980).Google Scholar
5)Tamura, M., Tamura, H., Miyao, M. and Tokuyama, T.: Jpn.J.Appl.Phys. 20 (1981) Suppl.20–1 P.43.Google Scholar
6)Magee, T.J., Palkuti, L.J., Ormond, R., Leung, C. and Graham, S.: Appl.Phys.Lett. 38 248 (1981).Google Scholar
7)Kamins, T.I., Cass, T.R. and Dell'Oca, C.J., Lee, K.F., Pease, R.F.W. and Gibbons, J.F.: J.Elec.Chem.Soc. 128 1151 (1981).Google Scholar
8)Lam, H.W., Pinizzotto, R.F., Tasch, A.F. Jr: J.Elec.Chem. Soc 128 1981(1981).Google Scholar
9)Tamura, M., Ohkura, M. and Tokuyama, T.: Jpn.J.Appl.Phys. 21 (1982)Suppl.21–1, P.193.Google Scholar
10)Biegelsen, D.K., Johnson, N.M., Bartelink, D.J. and Moyer, M.D.:in ref (2).Google Scholar
11)Leamy, H.J.:in ref(3).Google Scholar
12)Geis, M.W., Smith, H.I., Tsaur, B.Y., Fan, J.C.C., Maby, E.W. and Antoniadis, D.A.: Appl.Phys.Lett. 40 158 (1932).Google Scholar
13)Ohkura, M., Ichikawa, M., Miyao, M. and Tokuyama, T.;Google Scholar
13a to be appeared in Appl.Phys.Lett. (Dec. 1982).Google Scholar
14)Ichikawa, M. and Hayakawa, K.; Jpn.J.Appl.Phys. 21 145 (1982).Google Scholar
15)Stultz, T.J. and Gibbons, J.F.; Appl.Phys.Lett. 39 498 (1981).Google Scholar
16)Kawamura, S., Sakurai, J., Nakano, M. and Takagi, M.; Appl.Phys.Lett. 40 394 (1982).Google Scholar
17)Trimble, L.E., Celler, G.K., Ng, K.K., Baumgart, H. and Leamy, H.J.; in ref(3).Google Scholar
18)Celler, G.K., Trimble, L.E., Ng, K.K., Leamy, H.J. and Baumgart, H.: Appl.Phys.Lett. 40 1043 (1912).Google Scholar
19)Colinge, J.P., Demoulin, E., Bensahel, D. and Auvert, G.: Appl.Phys. Lett. 41 346 (1982).Google Scholar
20)Ishiwara, H., Nakano, M., Yamamoto, H. and Furukawa, S.; 1982International Conf. on Solid State Device,Tokyo.Google Scholar
21)Sakurai, J., Kawamura, S., Nakano, M. and Takagi, M.: Appl.Phys.Lett. 41 64 (1982).Google Scholar
22)Ohmura, Y., Matsushita, Y. and Kashiwagi, K.; Jpn.J.Appl.Phys. 21 1152 (1982).Google Scholar
23)Kunii, Y., Tabe, M. and Kajiyama, K.; 1982International Conf. on Solid State Device,Tokyo.Google Scholar
24)Lam, H.W., Sobczak, Z.P., Pinizzotto, R.F. and Tasch, A.F. Jr.; IEEE Electron Device 29 389 (1982).Google Scholar
25)Miyao, M., Ohkura, M., Takemoto, I., Tamura, M. and Tokuyama, T.; Appl.Phys.Lett. 411 59 (1982).Google Scholar
26)Miyao, M., Ohkura, M., Takemoto, I., Ichikawa, M., Tamura, M. and Tokuyama, T.; Digest of Tech. Paper p177 (1982 International Conf. on Solid State Device, Tokyo).Google Scholar
27)Ng, K.K., Cell, G.K., Povilonis, E.I., Frye, R.C., Leamy, H.J. and Sze, S.M.; IEEE Electron Device Lett. 2 316 (1981).Google Scholar
28)Lam, H.W.; in ref (3)Google Scholar
29)Geis, M.W., Antoniadis, D.A., Flanders, D.C. and Smith, H.I.;Google Scholar
29a Inter.Electron Device Meeting Technical Digest P.210, Dec. 1979.Google Scholar
30)Saitoh, S., Higuchi, K. and Okabayashi, H.;Google Scholar
30a Digest of Tech. Paper P.171,(1982 International Conf. on Solid State Device, Tokyo).Google Scholar
31)Gibbons, J.F. and Lee, K.F.; IEEE Electron Device Lett. 1 117 (1980).Google Scholar
32)Ohmura, Y.; Appl.Phys. Lett. 40 528 (1982).Google Scholar