Hostname: page-component-78c5997874-mlc7c Total loading time: 0 Render date: 2024-11-08T00:28:03.805Z Has data issue: false hasContentIssue false
  • English
  • Français

Characteristics of OUM Phase Change Materials and Devices for High Density Nonvolatile Commodity and Embedded Memory Applications

Published online by Cambridge University Press:  01 February 2011

Tyler A. Lowrey ,
Stephen J. Hudgens ,
Wally Czubatyj ,
Charles H. Dennison ,
Sergey A. Kostylev  and
Guy C. Wicker
Tyler A. Lowrey
Affiliation:
Ovonyx, Inc., 1030 E.El Camino Real #276, Santa Clara, CA94087 Tel: 408–653–9742 Fax: 408–653–5244 Email: [email protected]
Stephen J. Hudgens
Affiliation:
Ovonyx, Inc., 1030 E.El Camino Real #276, Santa Clara, CA94087 Tel: 408–653–9742 Fax: 408–653–5244 Email: [email protected]
Wally Czubatyj
Affiliation:
Ovonyx, Inc., 1030 E.El Camino Real #276, Santa Clara, CA94087 Tel: 408–653–9742 Fax: 408–653–5244 Email: [email protected]
Charles H. Dennison
Affiliation:
Ovonyx, Inc., 1030 E.El Camino Real #276, Santa Clara, CA94087 Tel: 408–653–9742 Fax: 408–653–5244 Email: [email protected]
Sergey A. Kostylev
Affiliation:
Ovonyx, Inc., 1030 E.El Camino Real #276, Santa Clara, CA94087 Tel: 408–653–9742 Fax: 408–653–5244 Email: [email protected]
Guy C. Wicker
Affiliation:
Ovonyx, Inc., 1030 E.El Camino Real #276, Santa Clara, CA94087 Tel: 408–653–9742 Fax: 408–653–5244 Email: [email protected]
Get access

Abstract

Phase change memory devices were originally reported by S. R.Ovshinsky [1] in 1968. A 256-bit phase-change memory array based on chalcogenide materials was reported in 1970 [2] Recent advances in phase change materials, memory device designs, and process technology have resulted in significant advances in phase change device performance, and a new memory device, called Ovonic Unified Memory (OUM), has been developed. This paper will discuss various device and materials characteristics of OUM phase change memory materials of interest in applications for nonvolatile high-density memories. These materials are generally Te chalcogenide based, exploiting the congruent crystallization of the FCC phase and the associated reduction in resistivity that results from crystallization from the quenched amorphous state. Data storage is a thermally initiated, rapid, reversible structural phase change in the film. While rewriteable DVD disks employ laser heat to induce the phase change and modulate reflectivity, OUM technology uses a short electrical current pulse to modulate resistivity. The device geometry and thermal environment dictate the power and energy required for memory state programming.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 803: Symposia GG/HH – Advanced Characterization Techniques for Data Storage Materials – Phase Change and Nonmagnetic Materials for Data Storage , 2003 , HH2.1
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Ovshinsky, S. R., Phys. Rev. Lett. 21 1450 (1968).Google Scholar
[2] Neale, R.G., Nelson, D.L. and Moore, Gordon E., Electronics, 56 (Sept. 28, 1970).Google Scholar
[3] Hernandez, J., Chao, B., Strand, D., Ovshinsky, S., Pawlik, D., Gasiorowski, P, Appl. Phys. Comm. 11(4), 557 (1992).Google Scholar
[4] Terao, M., Nishida, T., Miauchi, Y., Horiguchi, S., Kaku, T., and Ohta, N., Proc. Soc. Photo-Opt Instrum. Eng. 695, 105 (1986).Google Scholar
[5] Ohta, T., Inoue, K., Uchida, M., Yoshida, K., Akiyama, T., Furakawa, S., Nagata, K., and Nakamura, S., Proc. Int. Symp. on Optical Memory (Kobe 1998), Jpn. J. Appl. Phys. 28, Suppl. 28–3, 123 (1989).Google Scholar
[6] Lai, Stefan and Lowrey, Tyler, IEDM Tech. Dig., 803, 2001.Google Scholar
[7] Pirovano, A., Lacaita, A. L., Merlani, D., Benvenuti, A., Pellizzer, F. and Bez, R., IEDM Tech. Dig., 923, 2002.Google Scholar
[8] Kastner, M., Adler, D., Fritzsche, H., Phys. Rev. Lett. 37, 1504 (1976).Google Scholar
[9] Wicker, G., “A Comprehensive Model of Submicron Chalcogenide Switching Devices,” Ph.D. Dissertation, Wayne State University, Detroit, MI 1996.Google Scholar
[10] Ha, Y. H., Yi, J. H., Hori, H., Park, J. H., Joo, S. H., Park, S. O., Chung, U-In, Moon, J. T., IEEE 2003 Symposium on VLSI Technology, Kyoto, Japan, (June 12–14, 2003).Google Scholar
[11] Gill, Manzur, Tyler Lowrey and John Park, ISSCC 2002.Google Scholar
[12] Maimon, J., Rodgers, J., Burcin, L., NVMTS (Nonvolatile Memory Technology Symposium, Goddard Space Flight Center), Nov. 6, 2002.Google Scholar
[13] International Technology Roadmap for Semiconductors: 2002 update.Google Scholar
[14] Maimon, J., Hunt, K., Rodgers, J., Burcin, L., Knowles, K., NVMTS (Nonvolatile Memory Technology Symposium), 2003.Google Scholar