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Characteristics of N-doped Sb2Te3 Films by X-ray Diffraction and Resistance Measurement for Phase-change Memory

Published online by Cambridge University Press:  01 February 2011

You Yin ,
Naoya Higano ,
Kazuhiro Ohta ,
Akihira Miyachi ,
Masahiro Asai ,
Daisuke Niida ,
Hayato Sone  and
Sumio Hosaka
You Yin
Affiliation:
[email protected], Gunma University, Department of Nano-Material Systems, 1-5-1 Tenjin, Kiryu, Gunma, Kiryu, 376-8515, Japan, +81-277-30-1723, +81-277-30-1707
Naoya Higano
Affiliation:
[email protected], Gunma University, Department of Nano-Material Systems, 1-5-1 Tenjin, Kiryu, Gunma, 376-8515, Japan
Kazuhiro Ohta
Affiliation:
[email protected], Gunma University, Department of Electronic Engineering, 1-5-1 Tenjin, Kiryu, Gunma, 376-8515, Japan
Akihira Miyachi
Affiliation:
[email protected], Gunma University, Department of Nano-Material Systems, 1-5-1 Tenjin, Kiryu, Gunma, 376-8515, Japan
Masahiro Asai
Affiliation:
[email protected], Gunma University, Department of Nano-Material Systems, 1-5-1 Tenjin, Kiryu, Gunma, 376-8515, Japan
Daisuke Niida
Affiliation:
[email protected], Gunma University, Department of Nano-Material Systems, 1-5-1 Tenjin,, Kiryu, Gunma, 376-8515, Japan
Hayato Sone
Affiliation:
[email protected], Gunma University, Department of Nano-Material Systems, 1-5-1 Tenjin, Kiryu, Gunma, 376-8515, Japan
Sumio Hosaka
Affiliation:
[email protected], Gunma University, Department of Nano-Material Systems, 1-5-1 Tenjin, Kiryu, Gunma, 376-8515, Japan
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Abstract

In this paper, characterizations of sputtered undoped and nitrogen-doped Sb2Te3 (ST and STN) films by X-ray diffraction (XRD) and resistance measurements are described and their application of lateral phase-change memory (PCM) is presented. Nitrogen concentration of the films was controlled by changing the flow rate ratio of N2/Ar during sputtering. Resitivity of STN films drops by 3-4 orders of magnitude due to crystallization. Resistivity increase of the STN film (N2/Ar=0.15) at above 270°C results from phase precipitation of SbN. Experimental results reveal that the temperature of crystallization to face-centered cubic (fcc) significantly increases from below 100°C to 160–220°C with increasing the ratio of N2/Ar (in the range of 0–0.15) and crystal structure further transforms from fcc to hexagonal. At high flow rate ratio of N2/Ar (>0.15), hexagonal Te phase firstly appears at 160°C and then orthorhombic SbN appears at 290°C.

Keywords

phase transformationamorphousmemory
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 997: Symposium I – Materials and Processes for Nonvolatile Memories II , 2007 , 0997-I10-11
Copyright
Copyright © Materials Research Society 2007

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