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Carrier Transport in Polycrystalline and Amorphous Silicon Thin Film Transistors

Published online by Cambridge University Press:  28 February 2011

T. Sameshima ,
M. Sekiya ,
M. Hara ,
N. Sano  and
A. Kohno
T. Sameshima
Affiliation:
Sony Research Center, 174 Fujitsuka-cho, Hodogaya-ku, Yokohama 240 Japan
M. Sekiya
Affiliation:
Sony Research Center, 174 Fujitsuka-cho, Hodogaya-ku, Yokohama 240 Japan
M. Hara
Affiliation:
Sony Research Center, 174 Fujitsuka-cho, Hodogaya-ku, Yokohama 240 Japan
N. Sano
Affiliation:
Sony Research Center, 174 Fujitsuka-cho, Hodogaya-ku, Yokohama 240 Japan
A. Kohno
Affiliation:
Kyushu University, 6-1 Hakozaki, Higashi-ku, Fukuoka 812 Japan
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Abstract

The technologies of laser crystallization and methods of SiO2 formation in remote plasma chemical vapor deposition or SiO evaporation with an oxygen ambient realize the fabrication of n-channel polycrystalline and amorphous silicon thin film transistors (poly-Si and a-Si TFTs) at a temperature lower than 300 °C. The defect density was achieved to be 2∼3×1011 cm−2eV−1 and threshold voltage was about IV for both TFTs. The maximum field effect mobility was 600 cm2/Vs for poly-Si TFTs and 2.6 cm2/Vs for a-Si TFTs. The mobility of poly-Si TFT decreased as the gate voltage increases. This is interpreted as that the electrons are confined in the narrow inversion layer and electron scattering with phonon is enhanced for higher normal electric field.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 358: Symposium F – Microcrystalline and Nanocrystalline Semiconductors , 1994 , 927
Copyright
Copyright © Materials Research Society 1995

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References

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