Hostname: page-component-586b7cd67f-r5fsc Total loading time: 0 Render date: 2024-11-28T10:55:41.112Z Has data issue: false hasContentIssue false
  • English
  • Français

Carrier Doping of Silicon Nanowires Synthesized by Laser Ablation

Published online by Cambridge University Press:  01 February 2011

Naoki Fukata ,
Naoya Okada ,
Satoshi Matsushita ,
Takao Tsurui ,
Shun Ito ,
Jun Chen ,
Takashi Sekiguchi ,
Noriyuki Uchida  and
Kouichi Murakami
Naoki Fukata
Affiliation:
[email protected], National Institutefor Materials Science, Advanced Electronic Materials Center, 1-1 Namiki, Tsukuba, 305-0044, Japan, +81-29-860-4769, +81-29-860-4794
Naoya Okada
Affiliation:
[email protected], University of Tsukuba, Institute of Applied Physics, 1-1-1 Tennodai, Tsukuba, 305-8573, Japan
Satoshi Matsushita
Affiliation:
[email protected], University of Tsukuba, Institute of Applied Physics, 1-1-1 Tennodai, Tsukuba, 305-8573, Japan
Takao Tsurui
Affiliation:
[email protected], Tohoku University, Institute for Materials Research, 2-1-1 Katahira, Sendai, 980-8577, Japan
Shun Ito
Affiliation:
[email protected], Tohoku University, Institute for Materials Research, 2-1-1 Katahira, Sendai, 980-8577, Japan
Jun Chen
Affiliation:
[email protected], National Institutefor Materials Science, Advanced Electronic Materials Center, 1-1 Namiki, Tsukuba, 305-0044, Japan
Takashi Sekiguchi
Affiliation:
[email protected], National Institutefor Materials Science, Advanced Electronic Materials Center, 1-1 Namiki, Tsukuba, 305-0044, Japan
Noriyuki Uchida
Affiliation:
[email protected], University of Tsukuba, Institute of Applied Physics, 1-1-1 Tennodai, Tsukuba, 305-8573, Japan
Kouichi Murakami
Affiliation:
[email protected], University of Tsukuba, Institute of Applied Physics, 1-1-1 Tennodai, Tsukuba, 305-8573, Japan
Get access

Abstract

Boron (B) doped silicon nanowires (SiNWs) were synthesized by laser ablation. Local vibrational modes of B in SiNWs were observed by micro-Raman scattering measurements at room temperature. Broadening due to a coupling between the discrete optical phonon and a continuum of interband hole excitations was also observed in the Si optical phonon peak. This is called Fano broadening. These results prove that B atoms were doped in substitutional sites of crystalline Si core of SiNWs during laser ablation.

Keywords

nanostructureablationSi
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 963: Symposium Q – Nanowires and Carbon Nanotubes – Science and Applications , 2006 , 0963-Q10-37
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Cui, Y., Duan, X., Hu, J., and Lieber, C. M., J. Phys. Chem. B104, 5213 (2000).10.1021/jp0009305Google Scholar
2. Cui, Y. and Lieber, C. M., Science 291, 851 (2001).Google Scholar
3. Ma, D. D. D., Lee, C. S., and Lee, S. T., Appl. Phys. Lett. 79, 2468 (2001).Google Scholar
4. Lew, K. K., Pan, L., Bogart, T. E., Dilts, S. M., Dickey, E. C., Redwing, J. M., Wang, Y., Cabassi, M., Mayer, T. S., and Novak, S. W., Appl. Phys. Lett. 85, 3101 (2004).Google Scholar
5. Pan, L., Lew, K. K., Redwing, J. M., and Dickey, E. C., J. Crystal Growth 277, 428 (2005).Google Scholar
6. Fukata, N., Oshima, T., Murakami, K., Kizuka, T., Tsurui, T., and Ito, S., Appl. Phys. Lett. 86, 213112 (2005).Google Scholar
7. Fukata, N., Oshima, T., Okada, N., Murakami, K., Kizuka, T., Tsurui, T., and Ito, S., J. Appl. Phys. 100, 024311 (2006).Google Scholar
8. Fukata, N., Chen, J., Sekiguchi, T., Okada, N., Murakami, K., Tsurui, T., and Ito, S., Appl. Phys.Lett. 89, 203109 (2006).Google Scholar
9. Herrero, C. P. and Stutzmann, M., Phys. Rev. B 38, 12668 (1988).Google Scholar
10. Fano, U., Phys. Rev. 124, 1866 (1961).Google Scholar