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Carbon-Related Deep-Level Defects and Turn-On Recovery Characteristics in AlGaN/GaN Hetero-Structures

Published online by Cambridge University Press:  06 February 2014

Yoshitaka Nakano ,
Yoshihiro Irokawa ,
Masatomo Sumiya ,
Yasunobu Sumida ,
Shuichi Yagi  and
Hiroji Kawai
Yoshitaka Nakano
Affiliation:
Chubu University, 1200 Matsumoto, Kasugai, Aichi 487-8501, Japan
Yoshihiro Irokawa
Affiliation:
National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
Masatomo Sumiya
Affiliation:
National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
Yasunobu Sumida
Affiliation:
POWDEC, 1-23-15 Wakagi, Oyama, Tochigi 323-0028, Japan
Shuichi Yagi
Affiliation:
POWDEC, 1-23-15 Wakagi, Oyama, Tochigi 323-0028, Japan
Hiroji Kawai
Affiliation:
POWDEC, 1-23-15 Wakagi, Oyama, Tochigi 323-0028, Japan
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Abstract

We have investigated on a relation between C-related deep-level defects and turn-on recovery characteristics in bulk regions of AlGaN/GaN hetero-structures containing various C concentrations, employing their Schottky barrier diodes. With decreasing the growth temperature of the GaN buffer layer, three specific deep-level defects located at ∼2.07, ∼2.75, and ∼3.23 eV below the conduction band were significantly enhanced probably due to the C impurity incorporation into the GaN buffer layer. Among them, the ∼2.75 and ∼3.23 eV levels are considered to be strongly responsible for the two-dimensional electron gas (2DEG) carrier trapping in the bulk regions of the hetero-structures, from their turn-on current recovery characteristics under various optical illuminations.

Keywords

nitrideelectronic materialelectrical properties
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1635: Symposium T – Compound Semiconductor Materials and Devices , 2014 , pp. 109 - 114
Copyright
Copyright © Materials Research Society 2014 

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References

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