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Calculation of Carrier and Lattice Temperatures Induced in Si and GaAs By Picosecond Laser Pulses

Published online by Cambridge University Press:  15 February 2011

A. Lietoila  and
J. F. Gibbons
A. Lietoila
Affiliation:
Stanford Electronics Laboratories, Stanford, California, 94305, USA
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Abstract

A previously presented computer model was used to calculate melt thresholds and carrier temperatures in crystalline silicon and gallium arsenide subjected to picosecond laser pulses at 532 nm. The energy relaxation time of hot carriers was a variable parameter. For Si, a thermalization time of 1 ps yields results which are in very satisfactory agreement with published experimental data: the melt threshold is 0.19 J/cm2, and the maximum carrier temperature for the threshold pulse is 5500 K. The melt threshold in GaAs is substantially less, 0.03 J/cm2 for a thermalization time of 1 ps.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 163
Copyright
Copyright © Materials Research Society 1982

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References

REFERENCES

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